Method for Al thin film surface nanostructuring using Al imprinting and anodic oxidation: Application to a high capacitance density metal-insulator-metal capacitor

2017 ◽  
Vol 621 ◽  
pp. 36-41 ◽  
Author(s):  
Emmanouel Hourdakis ◽  
Androula G. Nassiopoulou
Keyword(s):  
Thin Film ◽  
Anodic Oxidation ◽  
Film Surface ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Surface Nanostructuring ◽  
Thin Film Surface ◽  
Metal Insulator Metal ◽  
Al Thin Film

High-Capacitance Metal-Insulator-Metal Capacitors Using Amorphous Sm[sub 2]Ti[sub 2]O[sub 7] Thin Film

2007 ◽  
Vol 154 (10) ◽  
pp. G220 ◽  
Author(s):  
J. C. Kim ◽  
Y. H. Jeong ◽  
J. B. Lim ◽  
K. P. Hong ◽  
S. Nahm ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Insulator ◽  
High Capacitance ◽  
Metal Insulator Metal

Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal

New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida
Keyword(s):  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Metal Insulator Metal

New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs

2011 ◽  
Vol 50 (4) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida
Keyword(s):  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Metal Insulator Metal

scholarly journals A Highly Tunable Barium Strontium Titanate Thin Film MIM Varactor With Floating Metal

2021 ◽  
Author(s):  
S Nath
Keyword(s):  
Thin Film ◽  
Barium Strontium Titanate ◽  
Coplanar Waveguide ◽  
Frequency Range ◽  
Metal Insulator ◽  
Capacitance Density ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Field Dependent ◽  
Bst Thin Film

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)

High capacitance density metal-insulator-metal structures based on a high-κ HfNxOy–SiO2–HfTiOy laminate stack

2008 ◽  
Vol 92 (13) ◽  
pp. 132902 ◽  
Author(s):  
V. Mikhelashvili ◽  
P. Thangadurai ◽  
W. D. Kaplan ◽  
G. Eisenstein
Keyword(s):  
Metal Insulator ◽  
Capacitance Density ◽  
Metal Structures ◽  
High Capacitance ◽  
Metal Insulator Metal

scholarly journals A Highly Tunable Barium Strontium Titanate Thin Film MIM Varactor With Floating Metal

2021 ◽  
Author(s):  
S Nath
Keyword(s):  
Thin Film ◽  
Barium Strontium Titanate ◽  
Coplanar Waveguide ◽  
Frequency Range ◽  
Metal Insulator ◽  
Capacitance Density ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Field Dependent ◽  
Bst Thin Film

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)

Dielectric Relaxation and Reliability of Al2O3-HfO2-Al2O3 Sandwiched Metal-Insulator-Metal (MIM) Capacitor

2013 ◽  
Vol 658 ◽  
pp. 116-119
Author(s):  
Ho Young Kwak ◽  
Hyuk Min Kwon ◽  
Sung Kyu Kwon ◽  
Jae Hyung Jang ◽  
Seung Yong Sung ◽  
...  
Keyword(s):  
Dielectric Relaxation ◽  
Charge Trapping ◽  
Dissipation Factor ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Voltage Coefficient ◽  
Low Dissipation ◽  
Metal Insulator Metal ◽  
Sandwiched Structure

. In this paper, dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitor using Al2O3-HfO2-Al2O3 sandwiched structure were analyzed. It is shown that multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature. The dielectric relaxation voltage shows little dependence on the capacitor area. The capacitance density (C0) increases and quadratic voltage coefficient (α) decreases as a function of stress time under constant voltage stress (CVS) because of the charge trapping effect in the high-k dielectric.

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