Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

AbstractThe MIM capacitors with HfO2 and HfAlOx are investigated for Si RF and analog applications. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. A high capacitance density of 13 fF/μm2with a low leakage current and a VCC of 607 ppm/V is obtained for 10 nm HfO2 MIM capacitor, which can meet the requirement of the ITRS roadmap by 2007 for silicon RF application. On the other hand, it was found that both the capacitance density and voltage coefficients of capacitance (VCC) values of the HfAlOx MIM capacitors decrease with increasing Al2O3 concentration. The results show that HfAlOx MIM capacitor with an Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density of 3.5 fF/μm2 and a low VCC of μ140 ppm/V2. Also, small frequency dependence, low leakage current, and low loss tangent are obtained. Thus, the HfAlOx MIM capacitor with an Al2O3 mole ratio of 0.14 is very suitable for use in silicon analog applications.

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Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Journal of Electronic Materials ◽

10.1007/s11664-006-0007-2 ◽

2007 ◽

Vol 36 (6) ◽

pp. 648-653 ◽

Cited By ~ 19

Author(s):

S. S. Hullavarad ◽

D. E. Pugel ◽

E. B. Jones ◽

R. D. Vispute ◽

T. Venkatesan

Keyword(s):

Leakage Current ◽

Semiconductor Device ◽

Breakdown Strength ◽

Pulsed Laser ◽

Current Transport ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Leakage ◽

Low Leakage Current ◽

Device Structures

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High-Performance MIM Capacitors based on TiO2/ZrO2/TiO2 and AlO-doped TiO2/ZrO2/TiO2 Dielectric Stacks for DRAM Applications

MRS Proceedings ◽

10.1557/opl.2013.824 ◽

2013 ◽

Vol 1561 ◽

Cited By ~ 1

Author(s):

Revathy Padmanabhan ◽

Navakanta Bhat ◽

S. Mohan ◽

Y. Morozumi ◽

Sanjeev Kaushal

Keyword(s):

Leakage Current ◽

High Performance ◽

Constant Current ◽

Barrier Heights ◽

Low Leakage ◽

Low Leakage Current ◽

High K ◽

Device Reliability ◽

Metal Insulator Metal ◽

Mim Capacitors

ABSTRACTMetal-insulator-metal (MIM) capacitors for DRAM applications have been realized using TiO2/ZrO2/TiO2 (TZT) and AlO-doped TZT (TZAZT and TZAZAZT) dielectric stacks. High capacitance densities of about 46.6 fF/μm2 (for TZT stacks), 46.2 fF/μm2 (for TZAZT stacks), and 46.8 fF/μm2 (for TZAZAZT stacks) have been achieved. Low leakage current densities of about 4.9×10−8 A/cm2, 5.5×10−9 A/cm2, and 9.7×10−9 A/cm2 (at -1 V) have been obtained for TZT, TZAZT, and TZAZAZT stacks, respectively. We analyze the leakage current mechanisms at different electric field regimes, and compute the barrier heights. The effects of constant current stress and constant voltage stress on the device characteristics are studied, and excellent device reliability is demonstrated. We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.

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