High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks

2007 ◽  
Vol 90 (1) ◽  
pp. 013506 ◽  
Author(s):  
V. Mikhelashvili ◽  
G. Eisenstein ◽  
A. Lahav
2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida

2011 ◽  
Vol 50 (4) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida

2008 ◽  
Vol 92 (13) ◽  
pp. 132902 ◽  
Author(s):  
V. Mikhelashvili ◽  
P. Thangadurai ◽  
W. D. Kaplan ◽  
G. Eisenstein

2013 ◽  
Vol 658 ◽  
pp. 116-119
Author(s):  
Ho Young Kwak ◽  
Hyuk Min Kwon ◽  
Sung Kyu Kwon ◽  
Jae Hyung Jang ◽  
Seung Yong Sung ◽  
...  

. In this paper, dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitor using Al2O3-HfO2-Al2O3 sandwiched structure were analyzed. It is shown that multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature. The dielectric relaxation voltage shows little dependence on the capacitor area. The capacitance density (C0) increases and quadratic voltage coefficient (α) decreases as a function of stress time under constant voltage stress (CVS) because of the charge trapping effect in the high-k dielectric.


2012 ◽  
Vol 51 (10) ◽  
pp. 104601-1 ◽  
Author(s):  
Kunhua Wen ◽  
Lianshan Yan ◽  
Wei Pan ◽  
Bin Luo ◽  
Zhen Guo ◽  
...  

2013 ◽  
Vol 33 (11) ◽  
pp. 1123003
Author(s):  
罗昕 Luo Xin ◽  
邹喜华 Zou Xihua ◽  
温坤华 Wen Kunhua ◽  
潘炜 Pan Wei ◽  
闫连山 Yan Lianshan ◽  
...  

2019 ◽  
Vol 30 (32) ◽  
pp. 32LT01
Author(s):  
Shiwei Shu ◽  
Chengping Huang ◽  
Meng Zhang ◽  
Yan Yan

Sign in / Sign up

Export Citation Format

Share Document