Semi-transparent copper iodide thin films on flexible substrates as p-type thermolegs for a wearable thermoelectric generator

2019 ◽  
Vol 683 ◽  
pp. 34-41 ◽  
Author(s):  
N.P. Klochko ◽  
D.O. Zhadan ◽  
K.S. Klepikova ◽  
S.I. Petrushenko ◽  
V.R. Kopach ◽  
...  
2019 ◽  
Vol 361 ◽  
pp. 396-402 ◽  
Author(s):  
Fangjuan Geng ◽  
Lei Yang ◽  
Bing Dai ◽  
Shuai Guo ◽  
Gang Gao ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (61) ◽  
pp. 35384-35391 ◽  
Author(s):  
J. Coroa ◽  
B. M. Morais Faustino ◽  
A. Marques ◽  
C. Bianchi ◽  
T. Koskinen ◽  
...  

Simultaneously transparent and flexible conductive materials are in demand to follow the current trend in flexible technology. A highly transparent and flexible thermoelectric generator of 17 p–n modules was constructed based on copper iodide thin films.


2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.


2021 ◽  
Vol 31 (2) ◽  
pp. 163-165
Author(s):  
Aleksei Yu. Grishko ◽  
Elena A. Zharenova ◽  
Eugene A. Goodilina ◽  
Alexey B. Tarasov

2021 ◽  
pp. 101500
Author(s):  
O. Madkhali ◽  
M. Jullien ◽  
Alaa E. Giba ◽  
J. Ghanbaja ◽  
S. Mathieu ◽  
...  

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.


Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  

2021 ◽  
pp. 1-1
Author(s):  
C. M. Madrid Aguilar ◽  
A. V. Svalov ◽  
A. A. Kharlamova ◽  
E. E. Shalygina ◽  
A. Larranaga ◽  
...  

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