scholarly journals Highly transparent copper iodide thin film thermoelectric generator on a flexible substrate

RSC Advances ◽  
2019 ◽  
Vol 9 (61) ◽  
pp. 35384-35391 ◽  
Author(s):  
J. Coroa ◽  
B. M. Morais Faustino ◽  
A. Marques ◽  
C. Bianchi ◽  
T. Koskinen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermoelectric Generator ◽  
Flexible Substrate ◽  
Current Trend ◽  
Copper Iodide ◽  
Conductive Materials ◽  
Flexible Technology ◽  
Flexible Thermoelectric

Simultaneously transparent and flexible conductive materials are in demand to follow the current trend in flexible technology. A highly transparent and flexible thermoelectric generator of 17 p–n modules was constructed based on copper iodide thin films.

Research Progress in the Preparation of Flexible Substrate Barrier Films

2021 ◽  
Vol 1027 ◽  
pp. 91-98
Author(s):  
Li Xia Guan ◽  
Zhao Yi Zhou ◽  
Yi Jing Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Flexible Electronics ◽  
Flexible Substrate ◽  
Research Progress ◽  
Barrier Films ◽  
Main Challenge ◽  
Long Life

The development of flexible electronics towards for the direction of bend ability, lightweight, portability, long life against falling. The performance of the substrate in the flexible electronics plays a very important role in the development of electronics. In this article, three preparation technologies of thin films are introduced, including CVD, PVD and ALD. The paper also introduces the research progress on the preparation of substrate barrier films, and one main challenge that may face by the preparation of thin film materials. In order to satisfy the development of flexible electronics, improving the substrate’s performance constantly is needed. Finally, the development of preparing barrier films is prospected.

Synthesis and characterization of sprayed copper iodide thin films on flexible substrate

2020 ◽  
Author(s):  
Nisha Joseph ◽  
Tina Sebastian ◽  
Jilu C. John ◽  
Saji Augustine
Keyword(s):  
Thin Films ◽  
Flexible Substrate ◽  
Synthesis And Characterization ◽  
Copper Iodide

An Approach to a Flexible Thermoelectric Generator Fabricated using Bulk Materials

2016 ◽  
Vol 3 (2) ◽  
Author(s):  
B. Geppert ◽  
A. Feldhoff
Keyword(s):  
Thermoelectric Materials ◽  
Thermoelectric Generator ◽  
Flexible Substrate ◽  
Thermoelectric Device ◽  
Bulk Materials ◽  
Mineral Fiber ◽  
Flexible Thermoelectric ◽  
Copper Tape

AbstractA prototype flexible thermoelectric generator fabricated with bulk materials is presented. Mineral-fiber band and copper tape are used as flexible substrate and electric connectors, respectively, to coil up the constructed thermoelectric device under investigation. The applied active thermoelectric materials are

Semi-transparent copper iodide thin films on flexible substrates as p-type thermolegs for a wearable thermoelectric generator

2019 ◽  
Vol 683 ◽  
pp. 34-41 ◽  
Author(s):  
N.P. Klochko ◽  
D.O. Zhadan ◽  
K.S. Klepikova ◽  
S.I. Petrushenko ◽  
V.R. Kopach ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Generator ◽  
Flexible Substrates ◽  
Copper Iodide ◽  
P Type

Bi-Sb-Te Based Thin Film Thermoelectric Generator

2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Output Power ◽  
Power Factor ◽  
Thermoelectric Generator ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thermoelectric Thin Films ◽  
P Type

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

scholarly journals Ultra-smooth glassy graphene thin films for flexible transparent circuits

2016 ◽  
Vol 2 (11) ◽  
pp. e1601574 ◽  
Author(s):  
Xiao Dai ◽  
Jiang Wu ◽  
Zhicheng Qian ◽  
Haiyan Wang ◽  
Jie Jian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Glassy Carbon ◽  
Flexible Substrates ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Large Area ◽  
Conductive Materials ◽  
Lattice Planes

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits.

scholarly journals Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
C. Yang ◽  
D. Souchay ◽  
M. Kneiß ◽  
M. Bogner ◽  
H. M. Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Material ◽  
Copper Iodide ◽  
Earth Abundant ◽  
P Type ◽  
Flexible Thermoelectric

The Development of the Micro-Generator on the Substrate Based Thin Film

2008 ◽  
Author(s):  
Jun-Ichiro Kurosaki ◽  
Saburo Tanaka ◽  
Koji Miyazaki ◽  
Hiroshi Tsukamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Nitride ◽  
Temperature Difference ◽  
Thermoelectric Generator ◽  
Heat Radiation ◽  
Large Temperature ◽  
Substrate Thickness ◽  
Bulk Materials ◽  
Film Substrate

We fabricated bismuth-telluride based thin films and their in-plane thermoelectric micro-generators (4mm×4mm) on a glass substrate by using the flash evaporation method through shadow masks. We prepared fine powders of Bi2.0Te2.7Se0.3 (n-type) and Bi0.4Te3.0Sb1.6 (p-type). The shadow masks are fabricated by standard micro-fabrication processes such as nitridation of silicon, dry etching and wet etching. The output voltages of micro-generators are lower than that of a thermoelectric generator based on bulk materials. The main reason is because the temperature difference between cool and hot junctions of the micro-generator is small compared to a thermoelectric generator based on bulk materials. In this study, the micro-generators were fabricated on a silicon nitride substrate based thin film. By fabricating the micro-generator on the thin film substrate, a large temperature difference between cool and hot junctions is obtained due to the thin film effect and the heat radiation to air of the thin film substrate. At the silicon nitride substrate based thin films, the thermal conductivity is significantly reduced by 1.2 W/ (m K). The thin film substrate is prepared by applying the fabrication processes used for shadow masks. The silicon nitride substrate based thin film is fabricated by nitridation of silicon and then back etching the silicon wafer. The fabricated substrate thickness is 2.5 μm and 4.5 μm (4 mmx4 mm). The temperature between cool and hot junctions is measured by using the noncontact thermometer which senses the far-infrared radiation. The output voltage of the micro-generator based thin film is measured by giving a temperature difference by heating the bottom of the silicon nitride substrate based thin film.

Thermoelectric Properties of β-Zn4Sb3 Thin Films Deposited on Polyimide Flexible Substrate

2016 ◽  
Vol 847 ◽  
pp. 166-170
Author(s):  
Feng Li ◽  
Ping Fan ◽  
Jing Ting Luo ◽  
Zhuang Hao Zheng ◽  
Guang Xing Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Saturated Vapor ◽  
Flexible Substrate ◽  
Local Area ◽  
Atomic Ratio ◽  
Medium Temperature ◽  
Low Dimensional

Due to the high-performance in the medium temperature application, β-Zn4Sb3 thermoelectric material has been received much attention. It is found that low dimensional thin film can improve the thermoelectric properties of materials by quantum local area effect and interface effect in recent years. In this paper, the β-Zn4Sb3 thin film was prepared on polyimide flexible substrate by DC magnetron co-sputtering method. The results showed that the thin film exhibited predominately ZnSb phases when the thin film was prepared by DC magnetron sputtering using Zn4Sb3 alloy target. It is suggested that the element Zn has high saturated vapor pressure and the thin film is lack of Zn due to the evaporation during the heat treatment process. We further adopted co-deposition Zn and Zn4Sb3 by DC magnetron co-sputtering to supplement the content of Zn. The sputtering power of Zn4Sb3 is fixed and Zn is set to 21W, 27W and 34W, respectively. The results indicated that the thin films transformed from ZnSb phase into β-Zn4Sb3 phase after Zn added. EDS analysis demonstrated that the atomic ratio of Zn:Sb was approach 4:3, and a slightly surplus of Zn. The thermoelectric properties of thin films with β-Zn4Sb3 phase were improved obviously.

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