Nitrogen ion beam thinning of a-SiCN diaphragm for environmental cell prepared by low-energy ion beam enhanced chemical vapor deposition

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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Mechanical Properties of the Carbonaceous Films Formed by Focused Ion-beam-assisted Chemical Vapor Deposition

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.130.949 ◽

2010 ◽

Vol 130 (10) ◽

pp. 949-954

Author(s):

Junichi Yanagisawa

Keyword(s):

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor

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Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0237 ◽

1997 ◽

Author(s):

K. Doong ◽

J.-M. Fu ◽

Y.-C. Huang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

Specimen Preparation ◽

Preparation Technique ◽

Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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