Evolution and thermal stability of the subsurface zone in copper formed in dry and lubricated sliding tests studied by positron annihilation and EBSD techniques

Wear ◽  
2021 ◽  
pp. 204077
Author(s):  
Jerzy Dryzek ◽  
Mirosław Wróbel
Keyword(s):  
Thermal Stability ◽  
Positron Annihilation ◽  
Subsurface Zone ◽  
Thermal Stability Of ◽  
Lubricated Sliding

scholarly journals Structure of Rapidly Solidified Al-Fe-Cr-Ce Alloy

2011 ◽  
Vol 465 ◽  
pp. 199-202 ◽  
Author(s):  
Alena Michalcová ◽  
Dalibor Vojtěch ◽  
Pavel Novák ◽  
Ivan Procházka ◽  
Jakub Čížek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Positron Annihilation ◽  
Melt Spinning ◽  
Positron Annihilation Spectroscopy ◽  
Transmission Electron ◽  
Rapidly Solidified ◽  
Thermal Stability Of

An alloy containing Al – 3wt.% Cr – 3wt.% Fe – 0.8wt. % Ce, was prepared by melt spinning. Structure of obtained ribbons was observed by light, scanning and transmission electron microscopy. It was found out that the structure is very fine. Microhardness of cross sectioned ribbons was also measured. Defects in structure were determined by positron annihilation spectroscopy. The thermal stability of the alloy was observed by comparing rapidly solidified ribbons and ribbons annealed at 400°C and at 500°C for 100 h

Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques

2009 ◽  
Vol 105 (8) ◽  
pp. 083542 ◽  
Author(s):  
Masashi Kubota ◽  
Takeyoshi Onuma ◽  
Yujiro Ishihara ◽  
Akira Usui ◽  
Akira Uedono ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Positron Annihilation ◽  
Thermal Stability Of

scholarly journals Thermal Stability of MgyTi1-y Thin Films Investigated by Positron Annihilation Spectroscopy

2012 ◽  
Vol 35 ◽  
pp. 16-21 ◽  
Author(s):  
A. Anastasopol ◽  
S.W.H. Eijt ◽  
H. Schut ◽  
F.M. Mulder ◽  
F. Plazaola ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Thermal Stability Of

Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

2007 ◽  
Vol 994 ◽  
Author(s):  
Hannan Assaf ◽  
Esidor Ntsoenzok ◽  
Marie-France Barthe ◽  
Elisa Leoni ◽  
Marie-Odile Ruault ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Vacancy Concentration ◽  
Positron Annihilation Spectroscopy ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractThermally grown SiO2 was implanted at room temperature with 220 keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterisation of defects (bubbles, vacancy, Kr and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM were a consequence of the interaction between Kr and vacancies (V), with VnXem complexes created in the whole of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strongly desorption of Kr and the decrease in vacancy concentration.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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