MBE growth of room-temperature InAsSb mid-infrared detectors

2001 ◽  
Vol 227-228 ◽  
pp. 609-613 ◽  
Author(s):  
X Marcadet ◽  
A Rakovska ◽  
I Prevot ◽  
G Glastre ◽  
B Vinter ◽  
...  
Author(s):  
K.T. Chang ◽  
J.H. Mazur ◽  
R. Fathauer

Chromium disilicide is a semiconductor with a 0.3 eV bandgap. It has potential for applications in Si based infrared detectors. The CrSi2/Si system is a good candidate for epitaxy because of the low 0.1% lattice mismatch between the basal plane of CrSi2 and the (111) Si surface. Previous studies have reported that the growth of CrSi2 on (111) Si occurs as islands with orientation relationship. The work reported here is an extension of this previous study.In the present experiments, both (111) Si and 4°-off (111) Si were used as a substrates. After co-deposition of Cr and Si at room temperature in a MBE chamber, the deposited films was annealed in the same chamber at temperatures up to 720°C. Transmission electron microscopy diffraction and imaging were used to study the structure and morphology of the deposited films.


Science ◽  
2021 ◽  
Vol 374 (6572) ◽  
pp. 1201-1202
Author(s):  
Reuven Gordon

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .


1996 ◽  
Vol 32 (6) ◽  
pp. 560 ◽  
Author(s):  
J. Faist ◽  
F. Capasso ◽  
C. Sirtori ◽  
D.L. Sivco ◽  
A.L. Hutchinson ◽  
...  

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev

2011 ◽  
Vol 19 (20) ◽  
pp. 19454 ◽  
Author(s):  
Woo-Yong Jang ◽  
Majeed M. Hayat ◽  
Sebastián E. Godoy ◽  
Steven C. Bender ◽  
Payman Zarkesh-Ha ◽  
...  

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