MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cells

1997 ◽  
Vol 170 (1-4) ◽  
pp. 447-450 ◽  
Author(s):  
T. Soga ◽  
T. Kato ◽  
K. Baskar ◽  
C.L. Shao ◽  
T. Jimbo ◽  
...  
2016 ◽  
Vol 4 (31) ◽  
pp. 7415-7419 ◽  
Author(s):  
Yukun Wang ◽  
Dezhi Yang ◽  
Xiaokang Zhou ◽  
Saad M. Alshehri ◽  
Tansir Ahamad ◽  
...  

High quality perovskite thin films were manufactured via a vapour-assisted process. High efficiency solar cells (PCE up to 12.2%) and high detectivity photodetectors (photodetectivity up to 3 × 1012 Jones) can be fabricated by using the perovskite layer and C60.


2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.


2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters

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