Analysis of thermal stress in composite silicon carbide-titanium catbide-nickel system

1996 ◽  
Vol 51 (4) ◽  
pp. 44-45
2013 ◽  
Vol 183 (1) ◽  
pp. 13-29 ◽  
Author(s):  
John D. Stempien ◽  
David M. Carpenter ◽  
Gordon Kohse ◽  
Mujid S. Kazimi

1991 ◽  
Vol 31 (3) ◽  
pp. 202-208 ◽  
Author(s):  
E. E. Gdoutos ◽  
D. Karalekas ◽  
I. M. Daniel

1989 ◽  
Vol 4 (1) ◽  
pp. 189-203 ◽  
Author(s):  
T. N. Taylor

The surface composition and bonding of a wide variety of silicon carbide powders and whiskers have been characterized by x-ray photoelectron spectroscopy (XPS). Ultrafine SiC powders, grown by a radio frequency plasma process, have been shown to exhibit graphitic carbon and a thin suboxide coating. Whiskers of SiC, grown in a vapor-liquid-solid or proprietary commercial process, were generally covered by heavier oxides than the powders and to a variable degree showed silica-like bonding. Most of the materials were subject to sample charging. Procedures were developed to estimate these charging effects and interpret the complete catalog of XPS spectra from these materials with respect to Fermi-level assignments. Charge independent quantities, such as oxygen Auger parameter and O(1s)–Si(2p) peak position difference, were found to agree with accepted values in the literature while exhibiting trends consistent with suboxide and silica bonding assignments. The data give a broad basis for understanding the feedstock surface chemistry which is involved during fabrication of monolithic or composite silicon carbide materials.


1986 ◽  
Vol 78 ◽  
Author(s):  
John. R. Porter ◽  
F. F. Lange ◽  
A. H. Chokshi

ABSTRACTSilicon carbide whisker reinforcement can significantly reduce creep rates in polycrystalline alumina [1], but the system SiC/Al2O3 is thermodynamically unstable in air and oxidizes to mullite during creep testing [2]. The system SiC/Si3N4 was investigated as a potentially more stable, high temperature structural composite. Silicon carbide whiskers were successfully incorporated into a silicon nitride matrix doped with alumina and yttria. Processing involved mixing dispersed slurries of silicon carbide and silicon nitride, adding the dopants as a solution of their nitrates and subsequently increasing the pH to precipitate the additive hydroxides. The resulting slurries were filter pressed at room temperature and hot pressed at 1650°C in graphite dies to full density. X-ray diffraction and transmission electron microscopy confirmed the presence of β-Si3N4, α-SiC and trace quantities of α-Si3N4, confirming that the α-β Si3N4 reaction occurred. An additional, as yet unidentified, minor phase was also detected.Whisker reinforcement was shown to increase the room temperature flexural strength and fracture toughness but high temperature creep performance was unaffected by whisker reinforcement.


2013 ◽  
Vol 803 ◽  
pp. 295-299
Author(s):  
Qiu Feng Huang ◽  
Guo Yuan Xu

With the given the boundary and initial conditions, the analysis of internal thermal stress and mechanical stress field distribution was conducted on the special silicon carbide bricks for metallurgical furnace. By the simulation of ANSYS, the results show that a high temperature gradient and thermal stress in the special silicon carbide bricks, with great distortion of pipe within the bricks and a low level of mechanical stress, and the mutual offsetting between mechanical stress and thermal stress in some areas. Key words: metallurgy; new; silicon carbide; thermal stress; mechanical stress.


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