CW laser annealing of boron and arsenic-implanted silicon; electrical properties, crystalline structure and limitations

1981 ◽  
Vol 12 (3) ◽  
pp. 44
1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.


1978 ◽  
Vol 33 (8) ◽  
pp. 775-778 ◽  
Author(s):  
A. Gat ◽  
L. Gerzberg ◽  
J. F. Gibbons ◽  
T. J. Magee ◽  
J. Peng ◽  
...  

1982 ◽  
Vol 17 (12) ◽  
pp. 783-786 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
Y. Pauleau ◽  
J.C. Pfister
Keyword(s):  

2001 ◽  
Vol 206-213 ◽  
pp. 1393-1396
Author(s):  
D. Gutierrez ◽  
Octavio Peña ◽  
J.F. Fernandez ◽  
C. Moure

1985 ◽  
Vol 28 (4) ◽  
pp. 339-344 ◽  
Author(s):  
S. Peterström ◽  
G. Holmén ◽  
G. Alestig

1996 ◽  
Vol 5 (6-8) ◽  
pp. 741-746 ◽  
Author(s):  
C. Jany ◽  
F. Foulon ◽  
P. Bergonzo ◽  
A. Brambilla ◽  
F. Silva ◽  
...  

2019 ◽  
Vol 97 ◽  
pp. 62-66 ◽  
Author(s):  
S. Rascunà ◽  
P. Badalà ◽  
C. Tringali ◽  
C. Bongiorno ◽  
E. Smecca ◽  
...  

2006 ◽  
Vol 508 (1-2) ◽  
pp. 315-317 ◽  
Author(s):  
Hajime Watakabe ◽  
Toshiyuki Sameshima ◽  
Hiroshi Kanno ◽  
Masanobu Miyao

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