A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

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CW laser annealing of boron implanted polycrystalline silicon

Solid-State Electronics ◽

10.1016/0038-1101(85)90094-2 ◽

1985 ◽

Vol 28 (4) ◽

pp. 339-344 ◽

Cited By ~ 1

Author(s):

S. Peterström ◽

G. Holmén ◽

G. Alestig

Keyword(s):

Polycrystalline Silicon ◽

Laser Annealing ◽

Cw Laser

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CW laser annealing of boron and arsenic-implanted silicon; electrical properties, crystalline structure and limitations

Microelectronics Journal ◽

10.1016/s0026-2692(81)80247-9 ◽

1981 ◽

Vol 12 (3) ◽

pp. 44

Keyword(s):

Electrical Properties ◽

Crystalline Structure ◽

Laser Annealing ◽

Cw Laser

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CW Laser Annealing Of Ion-Implanted Silicon

10.1117/12.958017 ◽

1980 ◽

Cited By ~ 9

Author(s):

L. D. Hess ◽

R. A. Forber ◽

S. A. Kokorowski ◽

G. L. Olson

Keyword(s):

Laser Annealing ◽

Cw Laser ◽

Ion Implanted

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TA-A2 sheet resistivity reduction in polycrystalline silicon by pulsed laser and CW laser annealing

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1979.19714 ◽

1979 ◽

Vol 26 (11) ◽

pp. 1833-1833

Author(s):

T. Shibata ◽

K.F. Lee ◽

J.F. Gibbons

Keyword(s):

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

Sheet Resistivity ◽

Cw Laser

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Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

MRS Proceedings ◽

10.1557/proc-13-211 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 3

Author(s):

R. J. Nemanich ◽

D. K. Biegelsen ◽

W. G. Hawkins

Keyword(s):

Surface Topography ◽

Crystallization Process ◽

Laser Annealing ◽

Annealing Process ◽

Temperature Evolution ◽

Lattice Temperature ◽

Cw Laser ◽

Si Films ◽

Quartz Substrates

ABSTRACTAligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

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A comparison of furnace annealing and CW laser annealing of Yb+implants in CdTe

Radiation Effects ◽

10.1080/00337578708222907 ◽

1987 ◽

Vol 102 (1-4) ◽

pp. 69-82

Author(s):

D. Wood ◽

D. Shaw ◽

F. J. Bryant

Keyword(s):

Laser Annealing ◽

Furnace Annealing ◽

Cw Laser

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Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing

MRS Proceedings ◽

10.1557/proc-13-155 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 2

Author(s):

J. Narayan ◽

O. W. Holland ◽

G. L. Olson

Keyword(s):

Laser Annealing ◽

Solid Phase ◽

Furnace Annealing ◽

Plan View ◽

Dopant Segregation ◽

Cw Laser ◽

Retrograde Solubility ◽

Section Electron ◽

Residual Damage ◽

Section Electron Microscopy

ABSTRACTThe nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported [1] and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

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