Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

2003 ◽  
Vol 43 (9-11) ◽  
pp. 1417-1426 ◽  
Author(s):  
G. Lucovsky
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Transition Metal ◽  
Gate Dielectrics ◽  
Intrinsic Defects ◽  
High K ◽  
Band Alignments

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

2005 ◽  
Vol 45 (5-6) ◽  
pp. 827-830 ◽  
Author(s):  
G. Lucovsky ◽  
J.G. Hong ◽  
C.C. Fulton ◽  
N.A. Stoute ◽  
Y. Zou ◽  
...  
Keyword(s):  
Transition Metal ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Gate Dielectrics ◽  
X Ray ◽  
High K ◽  
X Ray Absorption

Hrtem Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-k Gate Dielectrics

2002 ◽  
Vol 747 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mzutani
Keyword(s):  
Rare Earth ◽  
Ionic Radius ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Rare Earth Oxide ◽  
The Other ◽  
High K ◽  
Capacitance Voltage

ABSTRACTThe effects of several rare earth oxide on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics were examined. The width of the hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

2003 ◽  
Vol 216 (1-4) ◽  
pp. 302-306 ◽  
Author(s):  
C. Ohshima ◽  
J. Taguchi ◽  
I. Kashiwagi ◽  
H. Yamamoto ◽  
S. Ohmi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Surface Treatment ◽  
Gate Dielectrics ◽  
Rare Earth Oxide ◽  
Annealing Condition ◽  
Si Substrates ◽  
High K ◽  
Effect Of Surface
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