Amorphous silicon thin-film negative electrode prepared by low pressure chemical vapor deposition for lithium-ion batteries

2003 ◽  
Vol 125 (7-8) ◽  
pp. 387-390 ◽  
Author(s):  
Hunjoon Jung ◽  
Min Park ◽  
Shin Hee Han ◽  
Hyuck Lim ◽  
Seung-Ki Joo
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Lithium Ion Batteries ◽  
Vapor Deposition ◽  
Negative Electrode ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Pressure Chemical

Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Paul A. Breddels ◽  
Hiroshi Kanoh ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Thin Film

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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