Characterization of Microcrystalline Silicon Thin Film Solar Cells Prepared by High Working Pressure Plasma-enhanced Chemical Vapor Deposition

2017 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Dong-Ho Kim ◽  
Ji-Hoon Lee ◽  
Myungkwan Song ◽  
Myunghun Shin
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Working Pressure ◽  
High Working Pressure

Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

2011 ◽  
Vol 181-182 ◽  
pp. 401-404
Author(s):  
Lan Li Chen ◽  
Sheng Zhao Wang ◽  
Ying Peng Yin ◽  
Ming Ji Shi
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Experimental Conditions

The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques

2006 ◽  
Vol 45 (4B) ◽  
pp. 3516-3518 ◽  
Author(s):  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
Hsin-Yuan Mao ◽  
Bing-Rui Wu ◽  
Yen-Chia Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Hot Wire ◽  
Laser Doping ◽  
Si Thin Film

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

2007 ◽  
Vol 101 (8) ◽  
pp. 084107 ◽  
Author(s):  
El Hassane Oulachgar ◽  
Cetin Aktik ◽  
Mihai Scarlete ◽  
Starr Dostie ◽  
Rob Sowerby ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Dielectric Thin Film
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