Threshold voltage shift of amorphous silicon thin film transistors with atmospheric pressure chemical vapor deposition silicon dioxide

1994 ◽  
Vol 64 (18) ◽  
pp. 2362-2363 ◽  
Author(s):  
Jeong Hyun Kim ◽  
Eui Yeol Oh ◽  
Jung Kee Yoon ◽  
Yong Suk Park ◽  
Chan Hee Hong
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Threshold Voltage Shift ◽  
Pressure Chemical

Silicon Thin Film Homoepitaxy by Rapid Thermal Atmospheric-Pressure Chemical Vapor Deposition (RT-APCVD)

1996 ◽  
Vol 429 ◽  
Author(s):  
Rémi Monna ◽  
Detlef Angermeier ◽  
Abdelilah Slaoui ◽  
Jean Claude Muller
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Characterization Methods ◽  
Growth Decline ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractThe homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900°C to 1300°C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. We propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction of the gaseous HCI with the silicon surface and the supersaturation of silicon.

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