An empirical model for leakage current in poly-silicon thin film transistor

2000 ◽  
Vol 44 (11) ◽  
pp. 2015-2019 ◽  
Author(s):  
M.J. Siddiqui ◽  
S. Qureshi
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Empirical Model ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Poly Silicon

Comparative analysis of advanced poly-silicon thin-film transistor architectures for drain field relief

2003 ◽  
Author(s):  
Guglielmo Fortunato ◽  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Massimo Cuscuna ◽  
Paolo Gaucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Analysis ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Drain Field

Study on Light Induced Leakage Current Related to Amorphous Silicon TFT Design

2007 ◽  
Vol 124-126 ◽  
pp. 259-262
Author(s):  
Jae Hong Jeon ◽  
Kang Woong Lee
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Gate Electrode ◽  
Silicon Thin Film ◽  
Pattern Design ◽  
Conventional Design ◽  
The One

We investigated the effect of amorphous silicon pattern design regarding to light induced leakage current in amorphous silicon thin film transistor. In addition to conventional design, where amorphous silicon layer is protruding outside the gate electrode, we designed and fabricated amorphous silicon thin film transistors in another two types of bottom gated structure. The one is that the amorphous silicon layer is located completely inside the gate electrode and the other is that the amorphous silicon layer is protruding outside the gate electrode but covered completely by the source and drain electrode. Measurement of the light induced leakage current caused by backlight revealed that the design where the amorphous silicon is located inside the gate electrode was the most effective however the last design was also effective in reducing the leakage current about one order lower than that of the conventional design.

Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor

2017 ◽  
Vol 17 (5) ◽  
pp. 3465-3468
Author(s):  
Hyung Yoon Kim ◽  
Ki Hwan Seok ◽  
Zohreh Kiaee ◽  
Hee Jae Chae ◽  
Sol Kyu Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Lightly Doped Drain

Approximate analytical model for the poly-silicon thin film transistor

1990 ◽  
Vol 26 (16) ◽  
pp. 1284 ◽  
Author(s):  
M.J. Izzard ◽  
P. Migliorato ◽  
W.I. Milne
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Poly Silicon

Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr2O3/SiOxNy Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 151-155
Author(s):  
Tung-Ming Pan ◽  
Tin-Wei Wu ◽  
Ching-Lin Chan ◽  
Kai-Ming Chen ◽  
Chih-Hong Lee
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Poly Silicon
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