Design and optimization of thin film fully depleted vertical surrounding gate (VSG) MOSFETs for enhanced short channel immunity

2002 ◽  
Vol 46 (9) ◽  
pp. 1333-1338 ◽  
Author(s):  
Abhinav Kranti ◽  
Rashmi ◽  
S Haldar ◽  
R.S Gupta
Keyword(s):  
Thin Film ◽  
Short Channel ◽  
Fully Depleted ◽  
Design And Optimization ◽  
Surrounding Gate

Theory of Vertical Amorphous Silicon Thin-Film Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
J. G. Shaw ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Channel Length ◽  
Large Area ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Design And Optimization ◽  
Current Path ◽  
Output Characteristics

ABSTRACTWe describe a vertical amorphous silicon thin-film transistor which is easy to fabricate and has a very short channel length that is determined by deposition, not lithography. Our vertical TFTs are compatible with large-area processing techniques andd have suitable terminal characteristics for use in practical circuits. Unlike a conventional thin-film transistor, the current path is primarily parallel to the electric field created by an insulated gate electrode. A two-dimensional computer program is used to analyze these devices and guide their design and optimization. We show how to suppress excessive leakage currents and improve the saturation of the output characteristics by a novel current-blocking technique.

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel
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