Analytical Modeling of Short-Channel Multi-Gate SOI MOSFETs with Special Emphasis on the Partially-Depleted and Fully-Depleted Surrounding Gate Transistor

2006 ◽  
Author(s):  
I. Pesic ◽  
H. Nakamura ◽  
H. Haneda ◽  
H. Yamazaki ◽  
H. Sakuraba ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Short Channel ◽  
Fully Depleted ◽  
Surrounding Gate

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

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