Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.2.111 ◽

2011 ◽

Vol 11 (2) ◽

pp. 111-120 ◽

Author(s):

Chung-Ha Suh

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Surrounding Gate

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Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

Microelectronic Engineering ◽

10.1016/s0167-9317(00)00419-6 ◽

2001 ◽

Vol 56 (3-4) ◽

pp. 241-259 ◽

Author(s):

Abhinav Kranti ◽

S. Haldar ◽

R.S. Gupta

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Short Channel ◽

Fully Depleted ◽

Surrounding Gate

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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Chinese Physics B ◽

10.1088/1674-1056/23/11/118505 ◽

2014 ◽

Vol 23 (11) ◽

pp. 118505 ◽

Author(s):

Shweta Tripathi

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Channel Potential ◽

Dual Material ◽

Lightly Doped Drain

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A New Two-dimensional Analytical Model for Threshold Voltage in Undoped Surrounding-gate MOSFETs

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306102 ◽

2006 ◽

Author(s):

T. Chiang

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Surrounding Gate

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A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2006.05.016 ◽

2007 ◽

Vol 47 (2-3) ◽

pp. 379-383 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's

Microelectronics Reliability ◽

10.1016/j.microrel.2018.03.004 ◽

2018 ◽

Vol 83 ◽

pp. 173-179 ◽

Author(s):

Hossein Mohammadi ◽

Huda Abdullah ◽

Chang Fu Dee ◽

P. Susthitha Menon

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Short Channel ◽

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An accurate 2D analytical model for short channel thin film fully depleted cylindrical/surrounding gate (CGT/SGT) MOSFET

Microelectronics Journal ◽

10.1016/s0026-2692(01)00008-8 ◽

2001 ◽

Vol 32 (4) ◽

pp. 305-313 ◽

Author(s):

A. Kranti ◽

S. Haldar ◽

R.S. Gupta

Keyword(s):

Thin Film ◽

Analytical Model ◽

Short Channel ◽

Fully Depleted ◽

Surrounding Gate

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A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635330 ◽

2006 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A Two-Dimensional (2D) Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.1.040 ◽

2011 ◽

Vol 11 (1) ◽

pp. 40-50 ◽

Author(s):

Shweta Tripathi ◽

S. Jit

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Potential Distribution ◽

Two Dimensional ◽

Short Channel ◽

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A compact, analytical two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/20/12/005 ◽

2005 ◽

Vol 20 (12) ◽

pp. 1173-1178 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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