Analysis of reverse current–voltage characteristics of Schottky diodes based on phonon-assisted tunneling including Frenkel emission mechanism

2002 ◽  
Vol 46 (9) ◽  
pp. 1283-1287 ◽  
Author(s):  
P Pipinys ◽  
A Rimeika ◽  
A Pipinien≐
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Emission Mechanism ◽  
Current Voltage ◽  
Frenkel Emission ◽  
Current Voltage Characteristics ◽  
Assisted Tunneling

Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier

2020 ◽  
Vol 1004 ◽  
pp. 1081-1087
Author(s):  
Anatoly M. Strel'chuk ◽  
Vitalii V. Kozlovski ◽  
Alexander A. Lebedev
Keyword(s):  
Activation Energy ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Differential Resistance ◽  
Base Layer ◽  
Type Layer ◽  
Current Voltage ◽  
Level 3 ◽  
Current Voltage Characteristics

Forward and reverse current-voltage (I-V) characteristics of commercial rectifying Schottky diodes (SDs) based on silicon carbide (4H-SiC, base layer doping level 3·1015 cm-3) have been studied under irradiation with 0.9 MeV electrons and 15 MeV protons. The starting diodes were characterized by a barrier height of ~1.5 eV and nearly ideal forward and reverse I-V characteristics. It was found that, at doses exceeding the threshold dose Dth, the series differential resistance Rs of the diodes grows as Rs ~ Dm (m = 10-15) and shows no tendency toward saturation. Dth ≈7·1015 cm-2 under electron irradiation, and Dth ≈ 4·1013 cm-2 in the case of irradiation with protons. Heating to 200oC results in that Rs decreases with activation energy of ~1.1 eV and Rs is partly annealed-out with activation energy of ~0.7 eV. The starting Schottky diodes changes only slightly under irradiation, but, possibly, the irradiation leads to an over-compensation of the n-type layer and formation of an additional barrier in the form of a pn junction.

Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes

1996 ◽  
Vol 68 (14) ◽  
pp. 1957-1959 ◽  
Author(s):  
Chr. Schröder ◽  
W. Heiland ◽  
R. Held ◽  
W. Loose
Keyword(s):  
Schottky Diodes ◽  
Reverse Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals A Study of a-Sic/C-Si(n) Isotype Heterojunctions

1993 ◽  
Vol 16 (1) ◽  
pp. 55-64 ◽  
Author(s):  
N. Georgoulas ◽  
L. Magafas ◽  
A. Thanailakis
Keyword(s):  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Diffusion Mechanism ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Emission Mechanism ◽  
Drift Diffusion ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage

In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X1= 4.20 ± 0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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