Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier

2020 ◽  
Vol 1004 ◽  
pp. 1081-1087
Author(s):  
Anatoly M. Strel'chuk ◽  
Vitalii V. Kozlovski ◽  
Alexander A. Lebedev
Keyword(s):  
Activation Energy ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Differential Resistance ◽  
Base Layer ◽  
Type Layer ◽  
Current Voltage ◽  
Level 3 ◽  
Current Voltage Characteristics

Forward and reverse current-voltage (I-V) characteristics of commercial rectifying Schottky diodes (SDs) based on silicon carbide (4H-SiC, base layer doping level 3·1015 cm-3) have been studied under irradiation with 0.9 MeV electrons and 15 MeV protons. The starting diodes were characterized by a barrier height of ~1.5 eV and nearly ideal forward and reverse I-V characteristics. It was found that, at doses exceeding the threshold dose Dth, the series differential resistance Rs of the diodes grows as Rs ~ Dm (m = 10-15) and shows no tendency toward saturation. Dth ≈7·1015 cm-2 under electron irradiation, and Dth ≈ 4·1013 cm-2 in the case of irradiation with protons. Heating to 200oC results in that Rs decreases with activation energy of ~1.1 eV and Rs is partly annealed-out with activation energy of ~0.7 eV. The starting Schottky diodes changes only slightly under irradiation, but, possibly, the irradiation leads to an over-compensation of the n-type layer and formation of an additional barrier in the form of a pn junction.

scholarly journals Мощные диоды Шоттки с участком отрицательного дифференциального сопротивления на вольт-амперной характеристике

2021 ◽  
Vol 55 (1) ◽  
pp. 75
Author(s):  
А.Г. Тандоев ◽  
Т.Т. Мнацаканов ◽  
С.Н. Юрков
Keyword(s):  
Schottky Diode ◽  
Carrier Transport ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Analytical Investigation ◽  
Base Layer ◽  
Neutral Drift ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

It is shown that at high current densities the carrier transport in base layer of Schottky diodes in addition to commonly accepted diffusive and drift currents is defined by recently discovered diffusion stimulated by quasi-neutral drift (DSQD). The influence of this recently discovered component of current on current-voltage characteristics of Schottky diode has been investigated. It was shown that in case if the ratio of base width $W$ to ambipolar diffusive length $L$ is higher than 1 ($W/L>1$) a part with negative differential resistance appears on the current-voltage characteristics of Schottky diode. The results of analytical investigation are confirmed by numerical calculation using INVESTIGATION program.

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1339-1342 ◽  
Author(s):  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
Mykola S. Boltovets ◽  
Valentyn A. Krivutsa ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Deep Level ◽  
Reverse Current ◽  
Differential Resistance ◽  
Base Resistance ◽  
Small Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Increasing Temperature ◽  
Surface Leakage ◽  
And Diffusion

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.

Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

2014 ◽  
Vol 778-780 ◽  
pp. 657-660 ◽  
Author(s):  
Ulrike Grossner ◽  
Francesco Moscatelli ◽  
Roberta Nipoti
Keyword(s):  
Activation Energy ◽  
Ideality Factor ◽  
Reverse Current ◽  
Activation Energies ◽  
Forward Current ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
The One ◽  
Post Implantation

Two families of Al+implanted vertical p+in diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z1/2defect for the one case and another one with an activation energy of 0.25eV.

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 605-608
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Michael E. Levinshtein ◽  
S.L. Rumyantsev ◽  
John W. Palmour
Keyword(s):  
Electron Irradiation ◽  
Schottky Diodes ◽  
Linear Part ◽  
Low Frequency ◽  
High Energy ◽  
Frequency Noise ◽  
Relaxation Processes ◽  
Low Frequency Noise ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.

scholarly journals Influence of radiation on the electrophysical parameters of GaAsP LEDs

2021 ◽  
Vol 22 (1) ◽  
pp. 56-61
Author(s):  
R.M. Vernydub ◽  
◽  
O.I. Kyrylenko ◽  
O.V. Konoreva ◽  
P.G. Litovchenko ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Electron Irradiation ◽  
Series Resistance ◽  
Differential Resistance ◽  
Isochronous Annealing ◽  
Barrier Potential ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrophysical Parameters

The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed.

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