Analytical UHV transmission electron microscopy studies of electronic structure changes between as-deposited Mn and Mn silicide on Si() surface

AbstractThe structure and chemistry of interfaces and grain boundaries are known to influence the optical and electrical properties of wide-band gap semiconductors structures. ZnO/AlN/Si(100) heterostructures grown by laser deposition were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local electronic structure of ZnO grain boundaries was investigated by high resolution Z-contrast imaging using scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy in a scanning mode. Zcontrast imaging and EELS were performed simultaneously enabling direct correlations between interface chemistry and local structure to be made. ZnO grain boundaries are composed of a periodic array of a basic structural unit. On the basis of the electron energy-loss near-edge structure (ELNES) of zinc and oxygen edges associated with the ZnO- grain boundaries, the corresponding electronic spectrum was discussed.

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First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction

Modern Physics Letters B ◽

10.1142/s0217984915501821 ◽

2015 ◽

Vol 29 (29) ◽

pp. 1550182 ◽

Cited By ~ 4

Author(s):

Xiao-Min He ◽

Zhi-Ming Chen ◽

Lei Huang ◽

Lian-Bi Li

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electronic Structure ◽

Electronic Properties ◽

First Principles ◽

Work Of Adhesion ◽

First Principles Calculations ◽

Orientation Relationships ◽

Transmission Electron ◽

Structure And Bonding

Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)/[Formula: see text]/6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)/[Formula: see text]/6H-SiC(0001) heterojunction are [Formula: see text]-[Formula: see text] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.

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Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100065079 ◽

1971 ◽

Vol 29 ◽

pp. 204-205

Author(s):

G. G. Shaw

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Aluminum Alloy ◽

Electron Beam ◽

Pure Aluminum ◽

Ion Milling ◽

Transmission Electron ◽

Fiber Matrix ◽

Ion Erosion ◽

Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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