High efficient extraction of M@C2n (M = La, Ce) by a high pressure and high temperature method

Tetrahedron ◽  
1998 ◽  
Vol 54 (37) ◽  
pp. 11123-11128 ◽  
Author(s):  
Bingbing Liu ◽  
Ziyang Liu ◽  
Wenguo Xu ◽  
Haibin Yang ◽  
Chunxiao Gao ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Method ◽  
High Efficient ◽  
Efficient Extraction

Off-stoichiometry effects on the thermoelectric properties of Cu2+δSe (−0.1 ≤ δ ≤ 0.05) compounds synthesized by a high-pressure and high-temperature method

CrystEngComm ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 695-700 ◽  
Author(s):  
Lisha Xue ◽  
Weixia Shen ◽  
Zhuangfei Zhang ◽  
Manjie Shen ◽  
Wenting Ji ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Chemical Composition ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Temperature Method

The chemical composition can directly tune the transport properties of Cu2Se liquid-like materials, including the carrier concentration, carrier mobility and superionic feature.

Thermoelectric properties of S-doped Cu2Se materials synthesized by high-pressure and high-temperature method

2019 ◽  
Vol 34 (01) ◽  
pp. 2050006
Author(s):  
Lisha Xue ◽  
Chao Fang ◽  
Weixia Shen ◽  
Manjie Shen ◽  
Wenting Ji ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Composition Change ◽  
Selenium Compounds ◽  
Competitive Effects ◽  
Temperature Method ◽  
Pressure Synthesis

High-pressure technique is an effective route to synthesize thermoelectric materials and tune transport properties simultaneously. In this work, S-doped copper–selenium compounds [Formula: see text], [Formula: see text] were successfully synthesized by high-pressure and high-temperature (HPHT) technology in just 30 min. [Formula: see text] samples show layered morphology composed of abundant pores and lattice defects. The appropriate S introduction ([Formula: see text] and 0.03) can effectively enhance Seebeck coefficient and reduce the thermal conductivity of [Formula: see text]. Compared with the pure [Formula: see text] sample, [Formula: see text] exhibits a 30% lower thermal conductivity, but the decline of power factor by the distinctly increased electrical resistivity at high temperature results in a smaller zT at temperature [Formula: see text] K. The variations of thermoelectric properties are resulted from the competitive effects between S-doping and actual composition change (Cu:S). It indicates that S-doping is not so effective in improving the zT value of [Formula: see text] materials by high-pressure synthesis.

scholarly journals Structure and properties of the graphene and diamond-copper composites fabricated by the high pressure-high temperature method

Mechanik ◽  
2016 ◽  
pp. 502-503
Author(s):  
Katarzyna Janik ◽  
Tomasz Czeppe ◽  
Lucyna Jaworska ◽  
Paweł Figiel ◽  
Lidia Lityńska-Dobrzyńska ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Structure And Properties ◽  
Temperature Method ◽  
High Pressure High Temperature

Effect of HPHT processing on the structure, and thermoelectric properties of Co4Sb12 co-doped with Te and Sn

2015 ◽  
Vol 3 (8) ◽  
pp. 4637-4641 ◽  
Author(s):  
Hairui Sun ◽  
Xiaopeng Jia ◽  
Le Deng ◽  
Pin Lv ◽  
Xin Guo ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Polycrystalline Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Method ◽  
Co Doped

Te–Sn co-doped Co4Sb12 bulk polycrystalline materials Co4Sb11.7−xTexSn0.3 have been prepared using a high pressure and high temperature method and then characterized using X-ray diffraction.

Pressure-induced thermoelectric properties of strongly reduced titanium oxides

CrystEngComm ◽  
2019 ◽  
Vol 21 (6) ◽  
pp. 1042-1047
Author(s):  
Haiqiang Liu ◽  
Hongan Ma ◽  
Lixue Chen ◽  
Fei Wang ◽  
Baomin Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Titanium Oxides ◽  
Temperature Method

This is the first systematic investigations about thermoelectric properties of strongly reduced titanium oxides, accomplished by high-pressure and high-temperature method.

The Enhanced Thermoelectric Properties of Ba0.4Co4Sb11.7Te0.3 Prepared by the High-Pressure and High-Temperature Method

2014 ◽  
Vol 33 (1) ◽  
pp. 59-63
Author(s):  
Song Hao ◽  
Hong An Ma ◽  
Le Deng ◽  
Kai Kai Jie ◽  
Zhe Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
X Ray Diffraction ◽  
Thermoelectric Figure ◽  
Seebeck Coefficients ◽  
Temperature Method ◽  
Increasing Temperature

AbstractPolycrystalline skutterudite Ba0.4Co4Sb11.7Te0.3 with a bcc crystal structure was prepared by the High-Pressure and High-Temperature (HPHT) method. The study explored a chemical method for introducing Ba atoms into the voids of CoSb3 to optimize the thermoelectric figure of merit ZT in the system of Ba0.4Co4Sb11.7Te0.3. The samples were characterized by X-ray diffraction, electron microprobe analysis, and thermoelectric properties measurement. The electrical resistivity, Seebeck coefficients and thermal conductivities of the samples were measured in the temperature range of 300–743 K. The power factor and the figure of merit, ZT, of the samples all increased with the increasing temperature. A dimensionless thermoelectric figure of merit of 0.87 at 743 K was achieved for n-type Ba0.4Co4Sb11.7Te0.3 at last. The results indicated Ba-filled CoSb3 prepared by HPHT method is an effective method to greatly enhance the thermoelectric properties of skutterudite compounds.

scholarly journals Controlled Growth of Indium Selenides by High-Pressure and High-Temperature Method

2022 ◽  
Vol 8 ◽  
Author(s):  
Yajie Dai ◽  
Shouxin Zhao ◽  
Hui Han ◽  
Yafei Yan ◽  
Wenhui Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Materials Science ◽  
Controlled Growth ◽  
Growth Pressure ◽  
Growth Technique ◽  
Temperature Growth ◽  
Temperature Method ◽  
Inse Crystal ◽  
Semiconducting Property

The controlled growth of indium selenides has attracted considerable research interests in condensed matter physics and materials science yet remains a challenge due to the complexity of the indium–selenium phase diagram. Here, we demonstrate the successful growth of indium selenides in a controllable manner using the high-pressure and high-temperature growth technique. The γ-InSe and α-In2Se3 crystals with completely different stoichiometries and stacking manner of atomic layers have been controlled grown by subtle tuning growth temperature, duration time, and growth pressure. The as-grown γ-InSe crystal features a semiconducting property with a prominent photoluminescence peak of ∼1.23 eV, while the α-In2Se3 crystal is ferroelectric. Our findings could lead to a surge of interest in the development of the controlled growth of high-quality van der Waal crystals using the high-pressure and high-temperature growth technique and will open perspectives for further investigation of fascinating properties and potential practical application of van der Waal crystals.

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