Difference between C4F8 and C5F8 plasmas in surface reaction processes for selective etching of SiO2 over Si3N4

2000 ◽  
Vol 374 (2) ◽  
pp. 243-248 ◽  
Author(s):  
Hideki Motomura ◽  
Shin-ichi Imai ◽  
Kunihide Tachibana
Keyword(s):  
Surface Reaction ◽  
Selective Etching ◽  
Reaction Processes

Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist

2001 ◽  
Vol 390 (1-2) ◽  
pp. 134-138 ◽  
Author(s):  
Hideki Motomura ◽  
Shin-ichi Imai ◽  
Kunihide Tachibana
Keyword(s):  
Surface Reaction ◽  
Selective Etching ◽  
Reaction Processes

scholarly journals Rate/Concentration Kinetic Petals: A Transient Method to Examine the Interplay of Surface Reaction Processes

2019 ◽  
Vol 123 (40) ◽  
pp. 8717-8725 ◽  
Author(s):  
Yixiao Wang ◽  
M. Ross Kunz ◽  
Denis Constales ◽  
Gregory Yablonsky ◽  
Rebecca Fushimi
Keyword(s):  
Surface Reaction ◽  
Transient Method ◽  
Reaction Processes

scholarly journals Si Processes and Si-H Surface. Studies on Surface Reaction Processes Using FTIR-ATR.

Hyomen Kagaku ◽  
1992 ◽  
Vol 13 (6) ◽  
pp. 358-364
Author(s):  
Kohei KAWAMURA ◽  
Shuichi ISHIZUKA ◽  
Hiroyuki SAKAUE ◽  
Yasuhiro HORIIKE
Keyword(s):  
Surface Reaction ◽  
Surface Studies ◽  
Reaction Processes

CANONICAL SURFACE REACTION PROCESSES ACTIVATED BY ELECTRONIC FRICTION

1996 ◽  
pp. 41-58
Author(s):  
D. M. NEWNS ◽  
T. F. HEINZ ◽  
J. A. MISEWICH ◽  
MADS BRANDBYGE ◽  
PER HEDEGARD
Keyword(s):  
Surface Reaction ◽  
Canonical Surface ◽  
Reaction Processes

Atomic-Scale Analysis of Plasma-Enhanced Chemical Vapor Deposition from SiH4/2 Plasmas on Si Substrates

1998 ◽  
Vol 507 ◽  
Author(s):  
Shyam Ramalingam ◽  
Dimitrios Maroudas ◽  
Eray S. Aydil
Keyword(s):  
Gas Phase ◽  
Surface Reaction ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Scale Analysis ◽  
Si Substrates ◽  
Stages Of Growth ◽  
Key Factor ◽  
Reaction Processes

ABSTRACTWe present a systematic atomic-scale analysis of the interactions of SiH3radicals originating in silane containing discharges with Si(001)-(2×1) and H-terminated Si(001)-(2×1) surfaces. Through simulations, we show that the hydrogen coverage of the surface is the key factor that controls both the surface reaction mechanism and the reaction probability. The SiH3radical reacts readily with the pristine Si(001)-(2×1) surface during the initial stages of growth while its reactivity with the corresponding H-terminated surface is considerably lower. Deposition of a-Si:H from SiH3 radicals has also been simulated by repeatedly impinging SiH3 radicals onto Si(001)-(2×1) surfaces maintained at 500 °C. During deposition under these conditions, the dominant mechanism of hydrogen removal from the surface is through abstraction by SiH3 radicals, which subsequently return to the gas phase as silane. The important reaction processes that take place during film growth have been identified and their energetics has been analyzed.

Ultrafast nonlinear optical studies of surface reaction processes

1993 ◽  
Author(s):  
R. J. D. Miller ◽  
L. A. Gomez-Jahn ◽  
Raymond J. Lanzafame ◽  
L. Min ◽  
Stephen P. Palese
Keyword(s):  
Nonlinear Optical ◽  
Surface Reaction ◽  
Optical Studies ◽  
Reaction Processes
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