Effects of oxygen radical on the properties of indium tin oxide thin films deposited at room temperature by oxygen ion beam assisted evaporation

2000 ◽  
Vol 377-378 ◽  
pp. 103-108 ◽  
Author(s):  
J.S. Kim ◽  
J.W. Bae ◽  
H.J. Kim ◽  
N.-E. Lee ◽  
G.Y. Yeom ◽  
...  
Vacuum ◽  
2000 ◽  
Vol 56 (1) ◽  
pp. 77-81 ◽  
Author(s):  
J.W. Bae ◽  
H.J. Kim ◽  
J.S. Kim ◽  
N.E. Lee ◽  
G.Y. Yeom

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy

2002 ◽  
Vol 415 (1-2) ◽  
pp. 272-275 ◽  
Author(s):  
J Tashiro ◽  
A Sasaki ◽  
S Akiba ◽  
S Satoh ◽  
T Watanabe ◽  
...  

2010 ◽  
Vol 518 (23) ◽  
pp. 6891-6896 ◽  
Author(s):  
S. Venkatachalam ◽  
Hiroshi Nanjo ◽  
Fathy M.B. Hassan ◽  
Kazunori Kawasaki ◽  
Mitsuhiro Kanakubo ◽  
...  

2008 ◽  
Vol 516 (7) ◽  
pp. 1365-1369 ◽  
Author(s):  
Li-Jian Meng ◽  
Jinsong Gao ◽  
M.P. dos Santos ◽  
Xiaoyi Wang ◽  
Tongtong Wang

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.


Author(s):  
S.R. Sarath Kumar ◽  
P. Malar ◽  
Thomas Osipowicz ◽  
S.S. Banerjee ◽  
S. Kasiviswanathan

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