Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

New conductive IBAD buffer for HTS applications

2001 ◽  
Vol 689 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Juergen Dzick ◽  
Lars-Oliver Kautschor ◽  
Christian Jooss ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Film Growth ◽  
Incident Angle ◽  
Texture Evolution ◽  
Ion Beam ◽  
Buffer Layers ◽  
Electrically Conductive ◽  
Ito Thin Films ◽  
Beam Parameters

ABSTRACTBiaxially aligned Indium Tin Oxide (ITO) thin films to be used as electrically conductive buffer layers were prepared by an Ion-Beam Assisted Deposition (IBAD) process on various substrates. Two Kaufman ion sources with 2.5 cm diameter were employed for the assisting and the sputtering beam, respectively. All deposited films revealed (001) oriented film growth with a strong in-plane alignment. The degree of the in-plane orientation was studied depending on the ion-beam parameters and the incident angle. Investigations (TEM and X-ray) of the texture evolution of these IBAD films during film growth were carried out. An in-plane texture of 12.6°FWHM for a 1 μm thick film has been achieved so far. The quality of the buffer has been demonstrated by the subsequent deposition of high-current carrying YBCO-films deposited by thermal coevaporation using a 3–5 nm thick Y2O3 interlayer. A jc of 0.76 MA/cm2 (77K, 0T) has been obtained for a 1 cm × 1 cm sample with ITO of 20° FWHM.

Characteristics of a Reactively Sputtered Indium Tin Oxide Thin Film Strain Gage for Use at Elevated Temperatures

1995 ◽  
Vol 403 ◽  
Author(s):  
Otto J. Gregory ◽  
Stephen E. Dyer ◽  
Paul S. Amons ◽  
Arnout Bruins SLOT
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Sensors ◽  
Dynamic Strain ◽  
Strain Gages ◽  
Ito Thin Films ◽  
Ito Films

AbstractStrain sensors based on thin films of indium tin oxide (ITO) have been developed for a variety of applications, where the measurement of both static and dynamic strain are required at elevated temperatures. ITO thin films were prepared by rf reactive sputtering in Ar:02 mixtures from high density, electrically conductive targets having a nominal composition of 90% In203 and 10% Sn02. The resulting ITO films exhibited room temperature resistivities between 2x10−2 and 2x102 ω cm, an optical bandgap of 3.5 ev and tested “n” type by hot probe. These same films exhibited large negative gage factors (G=δρ/ ρδε) when tested at room temperature and a relatively low temperature coefficient of resistance when tested at elevated temperature in air. Specifically, gage factors approaching -100 with little hysteresis were observed for strains up to 700 μin/in and TCR's as low as 195 ppm/°C have been measured for the sputtered ITO films. In addition, these films were electrically stable and readily formed ohmic contacts with platinum at temperatures up to 1180°C. In this paper, we report on the electrical properties and piezoresistive properties of ITO based strain gages at temperatures up to 1180°C. Prospects of using ITO thin films as the active strain elements in high temperature strain gages and the characteristics of strain sensors based on ITO are discussed.

scholarly journals Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature

2017 ◽  
Vol 18 (1) ◽  
pp. 69-74
Author(s):  
Leandro Voisin ◽  
Makoto Ohtsuka ◽  
Takashi Nakamura ◽  
S. Petrovska ◽  
B. Ilkiv ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Heat Treatment Temperature ◽  
Room Temperature ◽  
Visible Region ◽  
Treatment Temperature ◽  
Sputtering Deposition ◽  
Ito Thin Films

Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420 µΩcm has been obtained for the thin films deposited in pure Ar and subsequently heat treated at 923 K. The structure of the as-deposited indium saving indium-tin oxide films was amorphous and the crystallinity was improved with increasing heat treatment temperature. An increase in the heat treatment temperature does not enhance the transmittance of the films at oxygen flow rate higher than 0.4 cm3/min.

scholarly journals Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

2019 ◽  
Vol 10 ◽  
pp. 1511-1522 ◽  
Author(s):  
Petronela Prepelita ◽  
Ionel Stavarache ◽  
Doina Craciun ◽  
Florin Garoi ◽  
Catalin Negrila ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films ◽  
Ito Films

In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

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