Structural, electrical, and optical studies on rapid thermally processed ferroelectric BaTiO3 thin films prepared by metallo-organic solution deposition technique

1997 ◽  
Vol 300 (1-2) ◽  
pp. 289-294 ◽  
Author(s):  
P.C. Joshi ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Deposition Technique ◽  
Organic Solution ◽  
Optical Studies ◽  
Solution Deposition ◽  
Thermally Processed

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

scholarly journals Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

1999 ◽  
Vol 14 (5) ◽  
pp. 1860-1864 ◽  
Author(s):  
C. R. Foschini ◽  
P. C. Joshi ◽  
J. A. Varela ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Current Density ◽  
Chemical Solution Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Access Memory ◽  
Solution Deposition

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Effect of Acetic Acid/Water Ratio on the Microstructure and Properties of LaNiO3 Thin Films by Metal Organic Solution Deposition

2015 ◽  
Vol 815 ◽  
pp. 89-93
Author(s):  
Yuan Yuan Zhang ◽  
Xiao Dong Tang ◽  
Gen Shui Wang ◽  
Xian Lin Dong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Acetic Acid ◽  
Ph Value ◽  
Precursor Solution ◽  
Organic Solution ◽  
Solution Deposition ◽  
Ph Values ◽  
Metal Organic ◽  
Acetic Acid Water

Highly (100)-oriented LaNiO3 (LNO) thin films were prepared on p-type Si (100) substrates by metal organic solution deposition (MOSD). The LNO thin films were driven by series precursor solutions with different ratio of acetic acid to deionized water (Raaw) and pH values. The dependences of viscosity, pH value and the thermal property of the gel-derived powders of the precursor solution on Raaw values were systematically investigated. AFM images showed that Raaw can dramatically influence the surface roughness. When Raaw changed from 7:1 to 1:1, the surface roughness decreased from 3.695 nm to 1.488 nm. The resistivities of all the films are less than 2.1×10-3Ω·cm. It shows that the precursor solution has strong effect on the microstructure of the thin films and relatively slight effect on the resistivity.

Sign in / Sign up

Export Citation Format

Share Document