Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

1998 ◽  
Vol 336 (1-2) ◽  
pp. 236-239 ◽  
Author(s):  
Z.M Jiang ◽  
C.W Pei ◽  
L.S Liao ◽  
X.F Zhou ◽  
X.J Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Strong Surface

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

1996 ◽  
Vol 69 (3) ◽  
pp. 397-399 ◽  
Author(s):  
Albert Chin ◽  
W. J. Chen ◽  
F. Ganikhanov ◽  
G.‐R. Lin ◽  
Jia‐Min Shieh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures

1994 ◽  
Vol 49 (7) ◽  
pp. 4689-4694 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Robinson ◽  
J. R. Sizelove ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

1997 ◽  
Vol 40 (2) ◽  
pp. 214-218
Author(s):  
Nuofu Chen ◽  
Hongjia He ◽  
Yutian Wang ◽  
Lanying Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Molecular Beam

Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 229-233 ◽  
Author(s):  
B. Vögele ◽  
C.R. Stanley ◽  
E. Skuras ◽  
A.R. Long ◽  
E.A. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation
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