Plasma diagnosis and low-substrate-temperature deposition of Ba ferrite films in a damage-free sputtering apparatus with mixed gases

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 543-548 ◽  
Author(s):  
Nobuhiro Matsushita ◽  
Kenji Noma ◽  
Shigeki Nakagawa ◽  
Masahiko Naoe
Keyword(s):  
Substrate Temperature ◽  
Plasma Diagnosis ◽  
Temperature Deposition ◽  
Ferrite Films ◽  
Mixed Gases

Low substrate temperature deposition of crystalline SiC using HWCVD

2006 ◽  
Vol 501 (1-2) ◽  
pp. 169-172 ◽  
Author(s):  
Stefan Klein ◽  
Reinhard Carius ◽  
Friedhelm Finger ◽  
Lothar Houben
Keyword(s):  
Substrate Temperature ◽  
Temperature Deposition

SOME DIELECTRIC AND ELECTRONIC PROPERTIES OF CdSe FILMS

1967 ◽  
Vol 45 (3) ◽  
pp. 1353-1362 ◽  
Author(s):  
D. E. Brodie ◽  
J. LaCombe
Keyword(s):  
Dielectric Constant ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Electronic Properties ◽  
Experimental Error ◽  
Heat Treating ◽  
High Resistivity ◽  
Temperature Deposition ◽  
Lower Resistivity

The real part of the dielectric constant, K′, has been measured for high-resistivity films of CdSe at temperatures between 4.2 and 240 °K, at frequencies between 500 Hz and 50 kHz. Typically, its value is 9.0 at 4.2 °K, 9.5 at 77 °K, and it increases slowly with temperature to 10.0 at 240 °K. Within experimental error it is independent of frequency in the above range.The electrical resistivity of vacuum-deposited CdSe films has been investigated to determine the effect of substrate temperature, deposition rate, film thickness, sample aging, and heat treating. Measurements of film resistivity variations with temperature from 125 to 350 °K reveals the presence of two activation energies in the lower-resistivity films, but only one in the high-resistivity films in this temperature range.

Optimization of the Sputtering Process Parameters of AZO Films with Multiple Quality Characteristics

2012 ◽  
Vol 512-515 ◽  
pp. 1961-1964 ◽  
Author(s):  
Dong Cherng Wen ◽  
Chun Yao Hsu ◽  
Ai Huei Chiou
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Visible Range ◽  
Multiple Quality Characteristics ◽  
Deposition Parameters ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Temperature Deposition ◽  
Grey Relational

Aluminum-doped zinc oxide (AZO) films were deposited on polyethylene terephthalate (PET) by radio frequency magnetron sputtering. The influence of the various deposition parameters (R.F. power, substrate-to-target distance, substrate temperature, deposition time) on electrical, morphological and optical properties of AZO/PET films was investigated. The use of grey-based Taguchi method to determine the optimization of the process parameters by considering multiple performance characteristics has been reported. The electrical resistivity and the average transmittance of the AZO films were improved by increasing the substrate temperature. Finds based on the grey relational analysis show that the lowest electrical resistivity of AZO films to be about 1.6 × 10-3Ω-cm, and visible range transmittance about 80%.

Untersuchungen zur Epitaxie dünner Goldaufdampfschichten auf Alkalihalogeniden im Ultrahochvakuum

1968 ◽  
Vol 23 (10) ◽  
pp. 1526-1536 ◽  
Author(s):  
R. W. Adam
Keyword(s):  
Substrate Temperature ◽  
Crystal Orientation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Gold Films ◽  
Oriented Growth ◽  
Deposition Rates ◽  
Deposition Parameters ◽  
Temperature Deposition ◽  
Substrate Temperatures

In the present paper the oriented growth of gold on alkalihalides, cleaved in ultra high vacuum has been investigated. The dependence of the crystal orientation on the deposition parameters substrate temperature, deposition rate, and the physical properties of the substrate were studied systematically. At suitable substrate temperatures and deposition rates it was possible to obtain epitaxial gold films on KCl, KBr and KJ.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

2017 ◽  
Vol 435 ◽  
pp. 81-86 ◽  
Author(s):  
Saravanan Lakshmanan ◽  
Subha Krishna Rao ◽  
Manivel Raja Muthuvel ◽  
Gopalakrishnan Chandrasekaran ◽  
Helen Annal Therese
Keyword(s):  
Substrate Temperature ◽  
Temperature Deposition ◽  
Variable Substrate

Ohmic and rectifying contacts to n-SiC formed by energetic deposition of carbon

2014 ◽  
Vol 1693 ◽  
Author(s):  
Masturina Kracica ◽  
Jim G. Partridge ◽  
Dougal G. McCulloch ◽  
Patrick W. Leech ◽  
Anthony S. Holland ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Substrate Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Average Energy ◽  
Electrical Contacts ◽  
Electrical Characteristics ◽  
Temperature Deposition

ABSTRACTEnergetically-deposited carbon contacts to n-type 6H-SiC have exhibited either insulating, rectifying or ohmic electrical characteristics depending on the average energy of the depositing flux and the substrate temperature. Deposition at room temperature and at a low-medium average energy (<500 eV) has resulted in carbon with a low graphitic content and insulating electrical contacts. With higher average energy and at a moderately elevated temperature (∼100 °C), the higher graphitic content contacts were rectifying with an ideality factor, η, of ∼1.8 and barrier height of ∼0.88 eV. Oriented graphitic carbon deposited at 200 °C with biases exceeding 300 V formed ohmic contacts.

Sign in / Sign up

Export Citation Format

Share Document