Effects of substrate temperature, deposition pressure, and thickness on the morphology of ultrathin platinum film on SiO2/Si substrate

1992 ◽  
Vol 219 (1-2) ◽  
pp. 257-265 ◽  
Author(s):  
Rasoul N. Esfahani ◽  
G. Jordan Maclay ◽  
Gerry W. Zajac
Keyword(s):  
Substrate Temperature ◽  
Si Substrate ◽  
Deposition Pressure ◽  
Temperature Deposition

Low substrate temperature deposition of crystalline SiC using HWCVD

2006 ◽  
Vol 501 (1-2) ◽  
pp. 169-172 ◽  
Author(s):  
Stefan Klein ◽  
Reinhard Carius ◽  
Friedhelm Finger ◽  
Lothar Houben
Keyword(s):  
Substrate Temperature ◽  
Temperature Deposition

Interface Formation and the Heteroepitaxy of ZnSe on Si.

1990 ◽  
Vol 198 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
L.-E. Swartz ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Bulk Material ◽  
Znse Crystal ◽  
Si Substrate ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
Substrate Temperatures

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The growth has been carried out for raised substrate temperatures and also at room temperature followed by solid-phase epitaxial (SPE) regrowth. The ZnSe films have been characterized by a number of surface-sensitive techniques and both the interface and the bulk material have been examined with high resolution transmission electron microscopy (HRTEM). We find that an interlayer, which is most likely SiSex, is present between the ZnSe film and the Si substrate for growths made at 300 °C and causes loss of epitaxy. In the case of room temperature deposition and SPE, it is absent, leading to good epitaxy. In the latter situation, the films are very uniform and there is a 4° rotation of the ZnSe crystal axes relative to those of the Si substrate.

Microstructure Analysis of Agglomerated Epitaxial Columns of Si/PtSi/Si(111) Double Heterostructure

1993 ◽  
Vol 320 ◽  
Author(s):  
Kyung-Ho Park ◽  
Y. Kumagai ◽  
F. Hasegawa
Keyword(s):  
Substrate Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Microstructure Analysis ◽  
Stoichiometric Ratio ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Si Films ◽  
Interface Structures ◽  
Micro Structures

ABSTRACTMicro structures and interface structures of epitaxially grown PtSi and over-capping Si films on Si(111) substrates prepared by MBE were studied by RHEED, HREM, SEM and XRD. An epitaxially grown Si layer on the PtSi layer, which was fabricated by coevaporation of Pt and Si with the stoichiometric ratio (Pt/Si=l/1), was obtained as a Si(111)/PtSi(010)/Si(111) double heterostructure at the substrate temperature of 400°C. On the other hand, it was found that the PtSi layer transformed into epitaxial columns and/or walls when a Si over-capping layer was grown on the PtSi layer at a substrate temperature of 600°C or higher. These columns and/or walls were surrounded by a Si matrix which showed epitaxial relations to the Si substrate with stacking faults.

SOME DIELECTRIC AND ELECTRONIC PROPERTIES OF CdSe FILMS

1967 ◽  
Vol 45 (3) ◽  
pp. 1353-1362 ◽  
Author(s):  
D. E. Brodie ◽  
J. LaCombe
Keyword(s):  
Dielectric Constant ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Electronic Properties ◽  
Experimental Error ◽  
Heat Treating ◽  
High Resistivity ◽  
Temperature Deposition ◽  
Lower Resistivity

The real part of the dielectric constant, K′, has been measured for high-resistivity films of CdSe at temperatures between 4.2 and 240 °K, at frequencies between 500 Hz and 50 kHz. Typically, its value is 9.0 at 4.2 °K, 9.5 at 77 °K, and it increases slowly with temperature to 10.0 at 240 °K. Within experimental error it is independent of frequency in the above range.The electrical resistivity of vacuum-deposited CdSe films has been investigated to determine the effect of substrate temperature, deposition rate, film thickness, sample aging, and heat treating. Measurements of film resistivity variations with temperature from 125 to 350 °K reveals the presence of two activation energies in the lower-resistivity films, but only one in the high-resistivity films in this temperature range.

scholarly journals Синтез методом молекулярно-пучковой эпитаксии и свойства наноструктур InGaN разветвленной морфологии на кремниевой подложке

2019 ◽  
Vol 45 (21) ◽  
pp. 48
Author(s):  
Р.Р. Резник ◽  
К.П. Котляр ◽  
Н.В. Крыжановская ◽  
С.В. Морозов ◽  
Г.Э. Цырлин
Keyword(s):  
Substrate Temperature ◽  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Si Substrate ◽  
Mbe Growth ◽  
Morphological Studies

A possibility of InGaN «nanoflowers» MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages even at constant substrate temperature. The grown structures show wide photoluminescence spectrum in the range from 450 to 950 nm at room temperature.

scholarly journals Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

2017 ◽  
Vol 35 (2) ◽  
pp. 374-381 ◽  
Author(s):  
Qingtao Pan ◽  
Xin Song
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Near Infrared ◽  
Zno Films ◽  
Infrared Range ◽  
Deposition Pressure ◽  
Small Influence ◽  
Etching Behavior

Abstract Aluminum-doped zinc oxide (AZO) thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow rate and film thickness on optical and electrical properties were investigated using ultraviolet-visible (UV-Vis) spectrometer and Hall measurements. The experimental results revealed that a low resistivity, smaller than 4 × 10-4 Ω·cm, was obtained when the deposition pressure was smaller than 0.67 Pa and substrate temperature about 200 °C. Ar flow rate had a small influence on the resistivity but a big influence on the transparency at near infrared range (NIR). We obtained optimized AZO thin films with high ponductivity and transparency at low deposition pressure, small Ar flow and appropriate temperature (around 200 °C). The etching behavior of the AZO thin films deposited at the different Ar flow rates was also studied in this paper. The results show that Ar flow rate is a very important factor affecting the etching behavior.

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