Untersuchungen zur Epitaxie dünner Goldaufdampfschichten auf Alkalihalogeniden im Ultrahochvakuum

1968 ◽  
Vol 23 (10) ◽  
pp. 1526-1536 ◽  
Author(s):  
R. W. Adam
Keyword(s):  
Substrate Temperature ◽  
Crystal Orientation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Gold Films ◽  
Oriented Growth ◽  
Deposition Rates ◽  
Deposition Parameters ◽  
Temperature Deposition ◽  
Substrate Temperatures

In the present paper the oriented growth of gold on alkalihalides, cleaved in ultra high vacuum has been investigated. The dependence of the crystal orientation on the deposition parameters substrate temperature, deposition rate, and the physical properties of the substrate were studied systematically. At suitable substrate temperatures and deposition rates it was possible to obtain epitaxial gold films on KCl, KBr and KJ.

Hetero-Epitaxy of Group Va Metals on Sapphire

1972 ◽  
Vol 30 ◽  
pp. 492-493
Author(s):  
J. E. O'Neal ◽  
J. J. Bellina ◽  
B. B. Rath
Keyword(s):  
Thermal Contact ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Backing Plate ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Polishing Damage ◽  
Reflection Electron Diffraction

Thin films of the bcc metals vanadium, niobium and tantalum were epitaxially grown on (0001) and sapphire substrates. Prior to deposition, the mechanical polishing damage on the substrates was removed by an in-situ etch. The metal films were deposited by electron-beam evaporation in ultra-high vacuum. The substrates were heated by thermal contact with an electron-bombarded backing plate. The deposition parameters are summarized in Table 1.The films were replicated and examined by electron microscopy and their crystallographic orientation and texture were determined by reflection electron diffraction. Verneuil-grown and Czochralskigrown sapphire substrates of both orientations were employed for each evaporation. The orientation of the metal deposit was not affected by either increasing the density of sub-grain boundaries by about a factor of ten or decreasing the deposition rate by a factor of two. The results on growth epitaxy are summarized in Tables 2 and 3.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Microstructure of FCC/BCC Metal Multilayers

1989 ◽  
Vol 160 ◽  
Author(s):  
Nigel M. Jennett ◽  
D.J. Dingley ◽  
Y. Ando
Keyword(s):  
Substrate Temperature ◽  
Magnetic Moment ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Bcc Lattice ◽  
A Value ◽  
Fcc Lattice ◽  
Temperature Window ◽  
Backing Layer

AbstractBilayers of Cu/Fe and Cu/V and multilayers of Ni/Fe have been grown under high vacuum and ultra high vacuum conditions respectively with [111] epitaxy. Multilayer layer thicknesses ranged from 3 monolayers to 15 monolayers per layer. Improved epitaxy of the UHV growth was, we believe, due to the better vacuum although perfect material could only be obtained for growth within a narrow and shifting substrate temperature ‘window’. Possible shortfall in the quality of the Cu backing layer epitaxy was averted by a 2hr anneal at 425°C.In the Fe/Ni multilayers the Fe was observed to adopt the FCC lattice rather than the equilibrium BCC lattice for layer thicknesses less than 10 monolayers. This change of structure coincided with a reduction in sample magnetic moment per volume attributed to a collapse of the Fe moment to a value 7 times less than bulk.

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Microcrystalline Silicon for Solar Cells at High Deposition Rates by Hot Wire Cvd

2002 ◽  
Vol 715 ◽  
Author(s):  
R. E. I. Schropp ◽  
Y. Xu ◽  
E. Iwaniczko ◽  
G. A. Zaharias ◽  
A. H. Mahan
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Volume Fraction ◽  
Silicon Layer ◽  
Hot Wire ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Deposition Rates ◽  
Deposition Parameters ◽  
Si Films

AbstractWe have explored which deposition parameters in Hot Wire CVD have the largest impact on the quality of microcrystalline silicon (μc-Si) made at deposition rates (Rd) < 10 Å/s for use in thin film solar cells. Among all parameters, the filament temperature (Tfil) appears to be crucial for making device quality films. Using two filaments and a filament-substrate spacing of 3.2 cm, μc-Si films, using seed layers, can be deposited at high Tfil (∼2000°C) with a crystalline volume fraction < 70-80 % at Rd's < 30 Å/s. Although the photoresponse of these layers is high (< 100), they appear not to be suitable for incorporation into solar cells, due to their porous nature. n-i-p cells fabricated on stainless steel with these i-layers suffer from large resistive effects or barriers, most likely due to the oxidation of interconnected pores in the silicon layer. The porosity is evident from FTIR measurements showing a large oxygen concentration at ∼1050 cm-1, and is correlated with the 2100 cm-1 signature of most of the Si-H stretching bonds. Using a Tfil of 1750°C, however, the films are more compact, as seen from the absence of the 2100 cm-1 SiH mode and the disappearance of the FTIR Si-O signal, while the high crystalline volume fraction (< 70-80 %) is maintained. Using this Tfil and a substrate temperature of 400°C, we obtain an efficiency of 4.9 % for cells with a Ag/ZnO back reflector, with an i-layer thickness of only ∼0.7 μm. High values for the quantum efficiency extend to very long wavelengths, with values of 33 % at 800 nm and 15 % at 900 nm, which are unequalled by a-SiGe:H alloys. Further, by varying the substrate temperature to enable deposition near the microcrystalline to amorphous transition (‘edge’) and incorporating variations in H2 dilution during deposition of the bulk, efficiencies of 6.0 % have been obtained. The Rd's of these i-layers are 8-10 Å/s, and are the highest to date obtained with HWCVD for microcrystalline layers used in cells with efficiencies of ∼6 %.

scholarly journals Room-Temperature Deposition of Cobalt Monolayer on (7×4) Crown-Ether Ring Molecular Array : Ultra-High Vacuum STM and UPS Study

2020 ◽  
Vol 63 (9) ◽  
pp. 465-469
Author(s):  
Ryohei NEMOTO ◽  
Peter KRÜGER ◽  
Takuya HOSOKAI ◽  
Masaki HORIE ◽  
Satoshi KERA ◽  
...  
Keyword(s):  
Crown Ether ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Temperature Deposition

Optimization of the Sputtering Process Parameters of AZO Films with Multiple Quality Characteristics

2012 ◽  
Vol 512-515 ◽  
pp. 1961-1964 ◽  
Author(s):  
Dong Cherng Wen ◽  
Chun Yao Hsu ◽  
Ai Huei Chiou
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Visible Range ◽  
Multiple Quality Characteristics ◽  
Deposition Parameters ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Temperature Deposition ◽  
Grey Relational

Aluminum-doped zinc oxide (AZO) films were deposited on polyethylene terephthalate (PET) by radio frequency magnetron sputtering. The influence of the various deposition parameters (R.F. power, substrate-to-target distance, substrate temperature, deposition time) on electrical, morphological and optical properties of AZO/PET films was investigated. The use of grey-based Taguchi method to determine the optimization of the process parameters by considering multiple performance characteristics has been reported. The electrical resistivity and the average transmittance of the AZO films were improved by increasing the substrate temperature. Finds based on the grey relational analysis show that the lowest electrical resistivity of AZO films to be about 1.6 × 10-3Ω-cm, and visible range transmittance about 80%.

Deposition of Borocarbides Thin Films by Pulsed Laser Ablation: Growth Parameters and Characterization

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1049-1054 ◽  
Author(s):  
C. Ferdeghini ◽  
M.R. Cimberle ◽  
G. Grassano ◽  
D. Marre ◽  
M. Putti ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Growth Parameters ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Film Structure ◽  
Ultra High Vacuum ◽  
Structure And Properties ◽  
Deposition Parameters

In this paper we report results on the growth of borocarbides ErNi 2 B 2C and DyNi 2 B 2 C thin films by an ultra high vacuum laser ablation technique. The dependence of the film structure and properties on the deposition parameters has been studied. Moreover the possibility to obtain superconducting films with a tungsten buffer layer on MgO substrates has been successfully checked. Here we present details on the deposition procedure as well as on the structural, morphological, and physical characterization.

THE ROLES OF AMBIENT OXYGEN AND SUBSTRATE TEMPERATURE ON GROWTH OF DIAMOND THIN FILMS BY PULSED LASER DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Ambient Oxygen ◽  
Diamond Thin Films ◽  
Substrate Temperatures

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

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