Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

2017 ◽  
Vol 435 ◽  
pp. 81-86 ◽  
Author(s):  
Saravanan Lakshmanan ◽  
Subha Krishna Rao ◽  
Manivel Raja Muthuvel ◽  
Gopalakrishnan Chandrasekaran ◽  
Helen Annal Therese
Keyword(s):  
Substrate Temperature ◽  
Temperature Deposition ◽  
Variable Substrate

Low substrate temperature deposition of crystalline SiC using HWCVD

2006 ◽  
Vol 501 (1-2) ◽  
pp. 169-172 ◽  
Author(s):  
Stefan Klein ◽  
Reinhard Carius ◽  
Friedhelm Finger ◽  
Lothar Houben
Keyword(s):  
Substrate Temperature ◽  
Temperature Deposition

SOME DIELECTRIC AND ELECTRONIC PROPERTIES OF CdSe FILMS

1967 ◽  
Vol 45 (3) ◽  
pp. 1353-1362 ◽  
Author(s):  
D. E. Brodie ◽  
J. LaCombe
Keyword(s):  
Dielectric Constant ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Electronic Properties ◽  
Experimental Error ◽  
Heat Treating ◽  
High Resistivity ◽  
Temperature Deposition ◽  
Lower Resistivity

The real part of the dielectric constant, K′, has been measured for high-resistivity films of CdSe at temperatures between 4.2 and 240 °K, at frequencies between 500 Hz and 50 kHz. Typically, its value is 9.0 at 4.2 °K, 9.5 at 77 °K, and it increases slowly with temperature to 10.0 at 240 °K. Within experimental error it is independent of frequency in the above range.The electrical resistivity of vacuum-deposited CdSe films has been investigated to determine the effect of substrate temperature, deposition rate, film thickness, sample aging, and heat treating. Measurements of film resistivity variations with temperature from 125 to 350 °K reveals the presence of two activation energies in the lower-resistivity films, but only one in the high-resistivity films in this temperature range.

Optimization of the Sputtering Process Parameters of AZO Films with Multiple Quality Characteristics

2012 ◽  
Vol 512-515 ◽  
pp. 1961-1964 ◽  
Author(s):  
Dong Cherng Wen ◽  
Chun Yao Hsu ◽  
Ai Huei Chiou
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Visible Range ◽  
Multiple Quality Characteristics ◽  
Deposition Parameters ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Temperature Deposition ◽  
Grey Relational

Aluminum-doped zinc oxide (AZO) films were deposited on polyethylene terephthalate (PET) by radio frequency magnetron sputtering. The influence of the various deposition parameters (R.F. power, substrate-to-target distance, substrate temperature, deposition time) on electrical, morphological and optical properties of AZO/PET films was investigated. The use of grey-based Taguchi method to determine the optimization of the process parameters by considering multiple performance characteristics has been reported. The electrical resistivity and the average transmittance of the AZO films were improved by increasing the substrate temperature. Finds based on the grey relational analysis show that the lowest electrical resistivity of AZO films to be about 1.6 × 10-3Ω-cm, and visible range transmittance about 80%.

Plasma diagnosis and low-substrate-temperature deposition of Ba ferrite films in a damage-free sputtering apparatus with mixed gases

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 543-548 ◽  
Author(s):  
Nobuhiro Matsushita ◽  
Kenji Noma ◽  
Shigeki Nakagawa ◽  
Masahiko Naoe
Keyword(s):  
Substrate Temperature ◽  
Plasma Diagnosis ◽  
Temperature Deposition ◽  
Ferrite Films ◽  
Mixed Gases

Untersuchungen zur Epitaxie dünner Goldaufdampfschichten auf Alkalihalogeniden im Ultrahochvakuum

1968 ◽  
Vol 23 (10) ◽  
pp. 1526-1536 ◽  
Author(s):  
R. W. Adam
Keyword(s):  
Substrate Temperature ◽  
Crystal Orientation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Gold Films ◽  
Oriented Growth ◽  
Deposition Rates ◽  
Deposition Parameters ◽  
Temperature Deposition ◽  
Substrate Temperatures

In the present paper the oriented growth of gold on alkalihalides, cleaved in ultra high vacuum has been investigated. The dependence of the crystal orientation on the deposition parameters substrate temperature, deposition rate, and the physical properties of the substrate were studied systematically. At suitable substrate temperatures and deposition rates it was possible to obtain epitaxial gold films on KCl, KBr and KJ.

Ohmic and rectifying contacts to n-SiC formed by energetic deposition of carbon

2014 ◽  
Vol 1693 ◽  
Author(s):  
Masturina Kracica ◽  
Jim G. Partridge ◽  
Dougal G. McCulloch ◽  
Patrick W. Leech ◽  
Anthony S. Holland ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Substrate Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Average Energy ◽  
Electrical Contacts ◽  
Electrical Characteristics ◽  
Temperature Deposition

ABSTRACTEnergetically-deposited carbon contacts to n-type 6H-SiC have exhibited either insulating, rectifying or ohmic electrical characteristics depending on the average energy of the depositing flux and the substrate temperature. Deposition at room temperature and at a low-medium average energy (<500 eV) has resulted in carbon with a low graphitic content and insulating electrical contacts. With higher average energy and at a moderately elevated temperature (∼100 °C), the higher graphitic content contacts were rectifying with an ideality factor, η, of ∼1.8 and barrier height of ∼0.88 eV. Oriented graphitic carbon deposited at 200 °C with biases exceeding 300 V formed ohmic contacts.

The Study of Ion Beam Assisted Deposition of CuInSe2 Absorber Films

2017 ◽  
Vol 900 ◽  
pp. 78-82
Author(s):  
Xue Lei Li ◽  
Yu Dong Feng ◽  
Hu Wang
Keyword(s):  
Substrate Temperature ◽  
Gas Phase ◽  
Concentration Distribution ◽  
Simulation Analysis ◽  
Ion Beam ◽  
Calculation Model ◽  
Ion Beam Assisted Deposition ◽  
Calculation Results ◽  
Temperature Deposition ◽  
Simulated Analysis

Based on the selenium ion beam assisted magnetron sequential sputtering technology, low temperature deposition of CIS thin-film solar cells in high quality can be achieved. By comparing with the method of conventional gas phase atomic deposition, and through simulated analysis from the perspective of diffusion uniformity, numerical calculation on the depth of ion beam injection is proceeded. First, according to the classical collision theory in molecular dynamics, the theoretical calculation on the process of ion implantation is done; the concentration distribution of implanted selenium ions can be got by using TRIM program for simulation analysis. On this basis, the concentration distribution of selenium ion after diffusion can be further obtained. Finally, the calculation model is established; through comparison and analysis, when the selenium diffusion uniformity is same in the both conditions, the substrate temperature T1 needed for ion beam assisted deposition and the substrate temperature T2 needed for gas phase atomic deposition are respectively calculated. The calculation results show that on the premise of merely considering the depth of implanted ions, from the perspective of the diffusion uniformity, the selenium ion beam assisted deposition technique can obviously reduce the substrate temperature comparing with traditional vapor deposition technology.

Role of low substrate temperature deposition on Co–Fe thin films

2019 ◽  
Vol 125 (11) ◽  
Author(s):  
Gizem Durak Yüzüak ◽  
E. Yüzüak ◽  
V. Nevruzoğlu ◽  
İ. Dinçer
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Temperature Deposition
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