The effect of substrate temperature, deposition rate and annealing on the electrical resistivity of thin yttrium films

1983 ◽  
Vol 18 (11) ◽  
pp. 3177-3182 ◽  
Author(s):  
M. A. Angadi ◽  
P. V. Ashrit
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Temperature Deposition

SOME DIELECTRIC AND ELECTRONIC PROPERTIES OF CdSe FILMS

1967 ◽  
Vol 45 (3) ◽  
pp. 1353-1362 ◽  
Author(s):  
D. E. Brodie ◽  
J. LaCombe
Keyword(s):  
Dielectric Constant ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Electronic Properties ◽  
Experimental Error ◽  
Heat Treating ◽  
High Resistivity ◽  
Temperature Deposition ◽  
Lower Resistivity

The real part of the dielectric constant, K′, has been measured for high-resistivity films of CdSe at temperatures between 4.2 and 240 °K, at frequencies between 500 Hz and 50 kHz. Typically, its value is 9.0 at 4.2 °K, 9.5 at 77 °K, and it increases slowly with temperature to 10.0 at 240 °K. Within experimental error it is independent of frequency in the above range.The electrical resistivity of vacuum-deposited CdSe films has been investigated to determine the effect of substrate temperature, deposition rate, film thickness, sample aging, and heat treating. Measurements of film resistivity variations with temperature from 125 to 350 °K reveals the presence of two activation energies in the lower-resistivity films, but only one in the high-resistivity films in this temperature range.

Optimization of the Sputtering Process Parameters of AZO Films with Multiple Quality Characteristics

2012 ◽  
Vol 512-515 ◽  
pp. 1961-1964 ◽  
Author(s):  
Dong Cherng Wen ◽  
Chun Yao Hsu ◽  
Ai Huei Chiou
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Visible Range ◽  
Multiple Quality Characteristics ◽  
Deposition Parameters ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Temperature Deposition ◽  
Grey Relational

Aluminum-doped zinc oxide (AZO) films were deposited on polyethylene terephthalate (PET) by radio frequency magnetron sputtering. The influence of the various deposition parameters (R.F. power, substrate-to-target distance, substrate temperature, deposition time) on electrical, morphological and optical properties of AZO/PET films was investigated. The use of grey-based Taguchi method to determine the optimization of the process parameters by considering multiple performance characteristics has been reported. The electrical resistivity and the average transmittance of the AZO films were improved by increasing the substrate temperature. Finds based on the grey relational analysis show that the lowest electrical resistivity of AZO films to be about 1.6 × 10-3Ω-cm, and visible range transmittance about 80%.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

scholarly journals Facilitating TiB2 for Filtered Vacuum Cathodic Arc Evaporation

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 244
Author(s):  
Tomasz L. Brzezinka ◽  
Jeff Rao ◽  
Jose M. Paiva ◽  
Ibon Azkona ◽  
Joern Kohlscheen ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Deposition Rate ◽  
Axial Magnetic Field ◽  
Electrical Potential ◽  
Base Material ◽  
Hard Coatings ◽  
Grain Structure ◽  
High Deposition Rate ◽  
Bulk Hardness ◽  
Arc Evaporation

TiB2 is well established as a superhard coating with a high melting point and a low coefficient of friction. The brittle nature of borides means they cannot be utilised with arc evaporation, which is commonly used for the synthesis of hard coatings as it provides a high deposition rate, fully ionised plasma and good adhesion. In this work, TiB2 conical cathodes with non-standard sintering additives (carbon and TiSi2) were produced, and the properties of the base material, such as grain structure, hardness, electrical resistivity and composition, were compared to those of monolithic TiB2. The dependence of the produced cathodes’ electrical resistivity on temperature was evaluated in a furnace with an argon atmosphere. Their arc–evaporation suitability was assessed in terms of arc mobility and stability by visual inspection and by measurements of plasma electrical potential. In addition, shaping the cathode into a cone allowed investigation of the influence of an axial magnetic field on the arc spot. The produced cathodes have a bulk hardness of 23–24 GPa. It has been found that adding 1 wt% of C ensured exceptional arc-spot stability and mobility, and requires lower arc current compared to monolithic TiB2. However, poor cathode utilization has been achieved due to the steady generation of cathode flakes. The TiB2 cathode containing 5 wt% of TiSi2 provided the best balance between arc-spot behaviour and cathode utilisation. Preventing cathode overheating has been identified as a main factor to allow high deposition rate (±1.2 µm/h) from TiB2-C and TiB2-TiSi2 cathodes.

Low substrate temperature deposition of crystalline SiC using HWCVD

2006 ◽  
Vol 501 (1-2) ◽  
pp. 169-172 ◽  
Author(s):  
Stefan Klein ◽  
Reinhard Carius ◽  
Friedhelm Finger ◽  
Lothar Houben
Keyword(s):  
Substrate Temperature ◽  
Temperature Deposition
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