Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications

1987 ◽  
pp. 135-201 ◽  
Author(s):  
H. Morkoç ◽  
H. Unlu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Factors Affecting

On transconductance in the p-channel Si/SiGe heteroj unction field effect transistor

1992 ◽  
Vol 70 (10-11) ◽  
pp. 963-968
Author(s):  
S. J. Kovacic ◽  
J. J. Ojha ◽  
J. H. Swoger ◽  
J. G. Simmons ◽  
J-P. Noël ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Physical Structure ◽  
Factors Affecting ◽  
Inversion Channel ◽  
Current Conduction ◽  
Effect Transistor

Three factors affecting the transconductance characteristics of inversion-channel heterojunction field effect transistors are discussed. In each case, the effect on the hole population in the channel and, thereby, on the transconductance of the device is hypothesized. Experimental evidence which corroborates the effect of the various phenomena is also presented. These factors are (i) saturation of the hole population in the channel arising from dopant de-ionization in the charge sheet, (ii) parallel gate to source and drain current conduction arising from the physical structure of the device, and (iii) the effect of gate leakage on the non-equilibrium surface potential of the n–n heterojunction.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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