Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy

2001 ◽  
Vol 184 (1-4) ◽  
pp. 183-189 ◽  
Author(s):  
F. Giannazzo ◽  
L. Calcagno ◽  
F. Roccaforte ◽  
P. Musumeci ◽  
F. La Via ◽  
...  
Keyword(s):  
Scanning Capacitance Microscopy ◽  
Dopant Profile ◽  
Ion Implanted

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Exact description and data fitting of ion‐implanted dopant profile evolution during annealing

1984 ◽  
Vol 45 (8) ◽  
pp. 881-883 ◽  
Author(s):  
R. Ghez ◽  
G. S. Oehrlein ◽  
T. O. Sedgwick ◽  
F. F. Morehead ◽  
Y. H. Lee
Keyword(s):  
Data Fitting ◽  
Dopant Profile ◽  
Exact Description ◽  
Ion Implanted
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