scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1054-1058 ◽  
Author(s):  
Yukio Nishida ◽  
Hirokazu Sayama ◽  
Satoshi Shimizu ◽  
Takashi Kuroi ◽  
Akihiko Furukawa ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dual Gate

Rapid Thermal Annealing in Si

1984 ◽  
Vol 35 ◽  
Author(s):  
T.E. Seidel ◽  
C.S. Pai ◽  
D.J. Lischner ◽  
D.M. Maher ◽  
R.V. Knoell ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Removal Rate ◽  
Round Robin ◽  
Limiting Factor ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

ABSTRACTCertain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperature considerations are discussed. The implant disorder removal rate is measured (5eV removal energy for As induced damage). Shallower defect-free junctions are obtained using RTA. Results of a ”Round Robin”-RTA annealing are presented, transient enhanced diffusion is not prominent for As. New results for the concentration enhanced diffusion of As are presented. Diffusion from the channeling-tai1 region of shallow boron diffusions is noted as a limiting factor for producing shallow p+-junctions. Other issues are briefly discussed.

Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2150-2154 ◽  
Author(s):  
Jin-Wook Seo ◽  
Yoshitaka Kokubo ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
H. Baumgart ◽  
G. K. Celler ◽  
D. J. Lischner ◽  
McD. Robinson ◽  
T. T. Sheng
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Laser Annealing ◽  
Solid Phase ◽  
Good Control ◽  
Temperature Gradients ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Incoherent Light ◽  
Defect Control

ABSTRACTRapid Thermal Annealing (RTA) with tungsten halogen lamps provides excellent regrowth of silicon layers damaged by ion implantation. In addition to minimizing dopant redistribution, the inherent advantage of this technique is good control of temperature gradients. The latter is instrumental in reducing the density of extended defects in the annealed samples. In contrast, solid phase laser annealing, which involves steep temperature gradients, always leaves interstitial dislocation loops and point defect clusters. We present a comparative study of crystal quality following laser processing and incoherent light annealing as well as furnace annealing of As, P and B ion implanted Si wafers.

Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

1985 ◽  
Vol 47 (12) ◽  
pp. 1321-1323 ◽  
Author(s):  
K. Cho ◽  
M. Numan ◽  
T. G. Finstad ◽  
W. K. Chu ◽  
J. Liu ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Enhanced Diffusion During Rapid Thermal Annealing Of Indium And Boron In Double Implanted Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ganin ◽  
G. A. Sai-Halasz ◽  
T. O. Sedgwick
Keyword(s):  
Thermal Treatment ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
The Other ◽  
Enhanced Diffusion ◽  
Chemical Effects ◽  
Concentration Enhancement ◽  
Solid Phase Regrowth

AbstractExperimental results on the diffusion and precipitation of In and B doubly implanted into Si, followed by rapid thermal treatment are reported. It was observed that In redistributes itself and accumulates in defected regions. The amount of motion of each species is enhanced by the presence of the other. While the B influences In diffusion probably through the same mechanism that leads to concentration enhancement, the effect of In on B is not clear. There is no correlation with strain and no apparent chemical effects. Also the presence of B facilitates the sweeping out of In during low temperature solid phase regrowth.

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