Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

Mapping Intimacies ◽

10.1117/12.522025 ◽

2004 ◽

Author(s):

Yang D. Hong ◽

Yew T. Yeow

Keyword(s):

Profile Measurement ◽

Scanning Capacitance Microscopy ◽

Mobility Degradation ◽

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Quantitative two‐dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy

Applied Physics Letters ◽

10.1063/1.114207 ◽

1995 ◽

Vol 66 (3) ◽

pp. 344-346 ◽

Author(s):

Y. Huang ◽

C. C. Williams ◽

J. Slinkman

Keyword(s):

Inverse Modeling ◽

Profile Measurement ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

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Quantitative ultra shallow dopant profile measurement by scanning capacitance microscopy

Microscopy of Semiconducting Materials 2001 ◽

10.1201/9781351074629-112 ◽

2018 ◽

pp. 519-522

Author(s):

Yoshio Kikuchi ◽

Tomohiro Kubo ◽

Masataka Kase

Keyword(s):

Profile Measurement ◽

Scanning Capacitance Microscopy ◽

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Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy

Applied Surface Science ◽

10.1016/s0169-4332(01)00500-1 ◽

2001 ◽

Vol 184 (1-4) ◽

pp. 183-189 ◽

Author(s):

F. Giannazzo ◽

L. Calcagno ◽

F. Roccaforte ◽

P. Musumeci ◽

F. La Via ◽

...

Keyword(s):

Scanning Capacitance Microscopy ◽

Dopant Profile ◽

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Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589385 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1011 ◽

Author(s):

J. S. McMurray

Keyword(s):

Quantitative Measurement ◽

Two Dimensional ◽

Cross Sectional ◽

Scanning Capacitance Microscopy ◽

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Modeling study of scanning capacitance microscopy measurement for p-n junction dopant profile extraction

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.982075 ◽

2005 ◽

Author(s):

J. Yang ◽

Y.T. Yeow

Keyword(s):

Scanning Capacitance Microscopy ◽

Dopant Profile ◽

Microscopy Measurement ◽

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Measurement of Shallow Dopant Profile Using Scanning Capacitance Microscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.3990 ◽

2004 ◽

Vol 43 (6B) ◽

pp. 3990-3994 ◽

Author(s):

W. Goragot ◽

M. Takai

Keyword(s):

Scanning Capacitance Microscopy ◽

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Measurement of shallow dopant profile using scanning capacitance microscopy

Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference ◽

10.1109/imnc.2003.1268768 ◽

2004 ◽

Author(s):

W. Goragot ◽

M. Takai

Keyword(s):

Scanning Capacitance Microscopy ◽

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Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.833590 ◽

2004 ◽

Vol 51 (9) ◽

pp. 1496-1503 ◽

Author(s):

Y.D. Hong ◽

Y.T. Yeow ◽

W.K. Chim ◽

K.M. Wong ◽

J. Kopanski

Keyword(s):

Interface Traps ◽

Scanning Capacitance Microscopy ◽

Surface Mobility ◽

Mobility Degradation ◽

Microscopy Measurement

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Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436664 ◽

2005 ◽

Author(s):

Y.D. Hong ◽

J. Yan ◽

K.M. Wong ◽

Y.T. Yeow ◽

W.K. Chim

Keyword(s):

Inverse Modeling ◽

Scanning Capacitance Microscopy ◽

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Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data

Journal of Applied Physics ◽

10.1063/1.1512686 ◽

2002 ◽

Vol 92 (10) ◽

pp. 5798-5809 ◽

Author(s):

J. F. Marchiando ◽

J. J. Kopanski

Keyword(s):

Scanning Capacitance Microscopy ◽

Regression Procedure ◽

Dopant Profile ◽

Microscopy Data

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