Ti/TiN multilayers for hard coatings applications: in-situ characterization by real time spectroscopic ellipsometry

1998 ◽  
Vol 100-101 ◽  
pp. 491-495 ◽  
Author(s):  
Pierre Boher ◽  
Jean Louis Stehle ◽  
Sid Labdi ◽  
Philippe Houdy
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Hard Coatings ◽  
In Situ Characterization

Real Time Spectroscopic Ellipsometry: In Situ Characterization of Pyrrole Electropolymerization

1991 ◽  
Vol 138 (11) ◽  
pp. 3266-3275 ◽  
Author(s):  
Y. ‐T. Kim ◽  
R. W. Collins ◽  
K. Vedam ◽  
D. L. Allara
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
In Situ Characterization

In Situ Study of Barrier Layers Using Spectroscopic Ellipsometry and Mass Spectroscopy of Recoiled Ions

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Nitrogen Concentration ◽  
Random Access ◽  
Copper Interconnects ◽  
Access Memory ◽  
Barrier Layers ◽  
The Stability

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.

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