Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Anisotropic and Selective Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma

1986 ◽  
Vol 76 ◽  
Author(s):  
W-S. Pan ◽  
A. J. Steckl
Keyword(s):  
Thin Films ◽  
Emission Intensity ◽  
Etch Rate ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Oxygen Percentage ◽  
Dc Potential

ABSTRACTThe use of CHF3 plus oxygen plasma to achieve selective and anisotropic patterning of SiC thin films in the reactive ion etching (RIE) mode is reported. Experiments were performed using various levels of oxygen percentage (from zero to 90%), pressure (from 20 to 300 mTorr) and power (from 100W to 350W). Anisotropic etching of SiC with a vertical-to-lateral etch ratio in excess of 8:1 was measured for a CHF3 + 75%02 mixture at 20mT pressure and 200W RF power. Under these conditions, the SiC etch rate was measured to be 400 A/min and the selectivity over Si was approximately 2.2:1. The effect of the cathode DC potential and emission intensity of various species in the plasma on the SiC and Si etch rates is considered.

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

A model for reactive ion etching of PZT thin films

1999 ◽  
Vol 116-119 ◽  
pp. 456-460 ◽  
Author(s):  
G. Suchaneck ◽  
R. Tews ◽  
G. Gerlach
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Pzt Thin Films

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

1991 ◽  
Vol 240 ◽  
Author(s):  
C. P. Chen ◽  
K. S. Din ◽  
F. S. Huang
Keyword(s):  
Total Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Maximum Value ◽  
Oxygen Percentage ◽  
Sem Micrograph

ABSTRACTIn the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

Dry Etching of Sol-Gel Pzt

1998 ◽  
Vol 546 ◽  
Author(s):  
R. Zeto ◽  
B. Rod ◽  
M. Dubey ◽  
M. Ervin ◽  
J. Conrad ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Etch Rate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Milling ◽  
Ion Etching ◽  
Wide Range ◽  
Etch Rates ◽  
Argon Ion

AbstractTwo techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2ClF4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on t/Ti/SiO2 silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

Reactive ion etching of sol-gel deposited lead zirconate titanate (pzt) thin films in sf6 plasmas

2001 ◽  
Vol 37 (1-4) ◽  
pp. 67-74 ◽  
Author(s):  
George McLane ◽  
Ronald Polcawich ◽  
Jeffrey Pulskamp ◽  
Brett Piekarski ◽  
Madan Dubey ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Lead Zirconate ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Zirconate Titanate

Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in C12/Ar and BCl3/Cl2/Ar Chemistries

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Medelci ◽  
A. Tempez ◽  
E. Kim ◽  
N. Badi ◽  
D. Starikov ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Surface Composition ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Etch Rates

ABSTRACTBoron nitride (BN) and gallium nitride (GaN) are known as superior semiconductor materials for high power and high temperature applications. Undoped BN layers grown using ion beam and electron cyclotron resonance (ECR) assisted physical deposition on conductive GaN films have demonstrated good insulating properties. These films are thus good candidates as thin insulating layers in high temperature GaN-based device structures such as MIS diodes and MISFETs due to their close thermal expansion coefficient. In order to address the device processing issue, reactive ion etching (RIE) tests were performed on these films. Using Cl2/Ar chemistry, etch rates up to 600 Å/min were measured. These rates were found to increase linearly with increasing rf power and Cl2 flow rate. GaN layers grown by gas source MBE were also dry etched, resulting in smooth sidewalls. Etch rates up to 1,400 Å/min were achieved at 200 W rf power (-280 V d.c. bias) in a BCl3/Cl2/Ar chemistry; this is the highest RIE rate reported up to now for GaN. Using Cl2/Ar and BCl3/Cl2/Ar for BN and GaN respectively, etch selectivities in excess of 5:1 can be obtained. Finally, preliminary Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) results on residue deposition and surface composition changes as a function of the different etch conditions are presented.

Effects of Electrode Spacing on Reactive Ion Etching of 4H-SiC

2000 ◽  
Vol 622 ◽  
Author(s):  
Janna R. Bonds ◽  
Geoff E. Carter ◽  
Jeffrey B. Casady ◽  
James D. Scofield
Keyword(s):  
Etch Rate ◽  
Smooth Surface ◽  
Reactive Ion Etching ◽  
Electrode Spacing ◽  
Ion Etching ◽  
Plasma Peak ◽  
Etch Rates

ABSTRACT4H-SiC was selectively etched in a Reactive Ion Etch (RIE) system using a nickel mask. The power, pressure, and electrode spacing were varied within a RF generated SF6:O2 (1:2) plasma. Peak etch rates of up to 2600 Aring;/min. were obtained at a pressure of 350 mT, power of 90 W (2 W/cm2), and electrode spacing of 3.180 cm. Etches were all residue-free, although power levels above 60 W (1.36 W/cm2) resulted in the SiC surface being roughened, which limited smooth surface etch capability to 2000 Aring;/min. When comparing electrode spacing from 3.180 cm to 1.270 cm, the 3.180 cm spacing was found to have the highest etch rate at pressures ranging from 250 mT to 500 mT.

Reactive ion etching of TiN, TiAlN, CrN and TiCN Films in CF4/O2 and CHF3/O2 Plasmas

2005 ◽  
Vol 890 ◽  
Author(s):  
Patrick W. Leech ◽  
G. K. Reeves ◽  
A. S. Holland
Keyword(s):  
Flow Rate ◽  
Etch Rate ◽  
Power Flow ◽  
Reactive Ion Etching ◽  
Hard Coatings ◽  
Ion Etching ◽  
Flat Surfaces ◽  
Physical Sputtering ◽  
Polymer Deposition ◽  
Etch Rates

AbstractThe reactive ion etching of a range of hard coatings (TiN, TiCN, CrN and TiAlN) has been examined as a function of rf power, flow rate and pressure. The films were deposited by filtered arc deposition (TiN, TiAlN and CrN) or low energy electron beam (TiCN) on polished disc substrates of M2 tool steel. The flat surfaces were lithographically patterned with a grating structure (∼1 μm pitch). The TiN and TiCN layers have shown significantly higher etch rates (100-250 nm/min) than the CrN and TiAlN (∼5 nm/min) coatings. These regimes of higher and low etch rate were identified as ion-enhanced chemical etching and physical sputtering, respectively. In CF4/O2 plasma, the etch rate of the TiN and TiCN layers increased with rf power, flow rate and pressure which were parameters known to enhance the density of active fluorine species. The etch rates of TiN and TiCN layers were higher in CF4/O2 plasma than in CHF3/O2 gases in which polymer deposition was produced at pressure ≥ 35 mTorr.

Reactive Ion Etching Induced Surface Damage of Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 765-768 ◽  
Author(s):  
Jun Hai Xia ◽  
E. Rusli ◽  
R. Gopalakrishnan ◽  
S.F. Choy ◽  
Chin Che Tin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Textured Surface ◽  
Rf Power ◽  
Power Devices ◽  
Ion Etching ◽  
Maximum Value ◽  
Wide Range ◽  
Coarse Surface

Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main concerns in the fabrication of SiC based power devices [1]. Based on CHF3 + O2 plasma, 4H-SiC was etched under a wide range of RF power. Extreme coarse and textured etched surfaces were observed under certain etching conditions. A super-linear relationship was found between the surface roughness and RF power when the latter was varied from 40 to 160 W. A further increase in the RF power to 200 W caused the surface roughness to drop abruptly from its maximum value of 182.4 nm to its minimum value of 1.3 nm. Auger electron spectroscopy (AES) results revealed that besides the Al micromasking effect, the carbon residue that formed a carbon-rich layer, could also play a significant role in affecting the surface roughness. Based on the AES results, an alternative explanation on the origin of the coarse surface is proposed.

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