The influence of hydrostatic pressure on the temperature dependence of the resistivity in

1997 ◽  
Vol 229 (2) ◽  
pp. 194-198 ◽  
Author(s):  
I.V. Medvedeva ◽  
Yu.S. Bersenev ◽  
K. Bärner ◽  
L. Haupt ◽  
R. Mandal ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Temperature Dependence

Temperature Dependence of the Intervalley Deformation Potential of GaAs/AlAs Superlattices Under Hydrostatic Pressure

1997 ◽  
Vol 499 ◽  
Author(s):  
S. Guha ◽  
Q. Cai ◽  
M. Chandrasekhar ◽  
H. R. Chandrasekhar ◽  
Hyunjung Kim ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Pressure Dependence ◽  
Type I ◽  
Type Ii ◽  
Deformation Potential ◽  
Intervalley Scattering

ABSTRACTWe have studied the pressure dependence of the type-I and type-II transitions in (GaAs)m/(AlAs)m superlattices by photoluminescence (PL) spectroscopy. From the study of PL linewidths of the type-I exciton as a function of pressure and temperature, we determine the intervalley deformation potential. Beyond the type-I and type-II crossover, the PL linewidth increases both as a function of pressure and temperature. We find that the electron-phonon deformation potential for Γ-X intervalley scattering varies with temperature.

Electron Transport Properties of La1-xSrxTiO3 Under Hydrostatic Pressure

1997 ◽  
Vol 499 ◽  
Author(s):  
Charles C. Hays ◽  
Jianshi Zhou ◽  
John B. Goodenough ◽  
John T. Markert
Keyword(s):  
Electron Transport ◽  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Room Temperature ◽  
Itinerant Electron ◽  
Electron Transport Properties ◽  
P Type

ABSTRACTThe temperature dependence of the resistance and thermoelectric power under hydrostatic pressure between 10 and 300 K are reported for two compositions, x = 0.044 and x = 0.05, of the narrowband system La1-xSrxTiO3. The application of hydrostatic pressure at room temperature induces a transition from a positive p-type to a negative n-type thermoelectric power for x = 0.044. This behavior is interpreted within a model of itinerant-electron antiferromagnetism in LaTiO3.

scholarly journals Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
G. Gulyamov ◽  
U. I. Erkaboev ◽  
A. G. Gulyamov
Keyword(s):  
Experimental Data ◽  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Band Gap ◽  
Landau Levels ◽  
Quantum Oscillation ◽  
Quantum Oscillations ◽  
Effect Of Pressure ◽  
Calculation Results

The influence of pressure on the oscillations of Shubnikov-de Haas (ShdH) and de Haas-van Alphen (dHvA) in semiconductors is studied. Working formula for the calculation of the influence of hydrostatic pressure on the Landau levels of electrons is obtained. The temperature dependence of quantum oscillations for different pressures is determined. The calculation results are compared with experimental data. It is shown that the effect of pressure on the band gap is manifested to oscillations and ShdH and dHvA effects in semiconductors.

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