scholarly journals Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
G. Gulyamov ◽  
U. I. Erkaboev ◽  
A. G. Gulyamov
Keyword(s):  
Experimental Data ◽  
Hydrostatic Pressure ◽  
Temperature Dependence ◽  
Band Gap ◽  
Landau Levels ◽  
Quantum Oscillation ◽  
Quantum Oscillations ◽  
Effect Of Pressure ◽  
Calculation Results

The influence of pressure on the oscillations of Shubnikov-de Haas (ShdH) and de Haas-van Alphen (dHvA) in semiconductors is studied. Working formula for the calculation of the influence of hydrostatic pressure on the Landau levels of electrons is obtained. The temperature dependence of quantum oscillations for different pressures is determined. The calculation results are compared with experimental data. It is shown that the effect of pressure on the band gap is manifested to oscillations and ShdH and dHvA effects in semiconductors.

scholarly journals The Influence of External Factors on Quantum Magnetic Effects in Electronic Semiconductor Structures

2020 ◽  
Vol 9 (5) ◽  
pp. 1557-1563
Keyword(s):  
Experimental Data ◽  
Electrical Conductivity ◽  
External Factors ◽  
Landau Levels ◽  
Quantum Oscillation ◽  
Narrow Gap ◽  
Integral Expression ◽  
Semiconductor Structures ◽  
Longitudinal Conductivity ◽  
Calculation Results

A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.

scholarly journals Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

2019 ◽  
Vol 53 (12) ◽  
pp. 1621
Author(s):  
И.В. Боднарь ◽  
Б.Т. Чан ◽  
В.Н. Павловский ◽  
И.Е. Свитенков ◽  
Г.П. Яблонский
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Spinel Structure ◽  
Semiconductor Materials ◽  
Transmittance Spectra ◽  
Temperature Range

AbstractMnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.

Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

2020 ◽  
Vol 34 (07) ◽  
pp. 2050052
Author(s):  
U. I. Erkaboev ◽  
G. Gulyamov ◽  
J. I. Mirzaev ◽  
R. G. Rakhimov
Keyword(s):  
Electrical Conductivity ◽  
Magnetic Susceptibility ◽  
Temperature Dependence ◽  
Landau Levels ◽  
Experimental Results ◽  
Quantum Oscillation ◽  
Narrow Gap ◽  
Narrow Gap Semiconductors ◽  
Longitudinal Conductivity ◽  
Different Temperatures

Electrical conductivity oscillations, magnetic susceptibility oscillations and electronic heat capacity oscillations for narrow-gap electronic semiconductors are considered at different temperatures. A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the bandgap of narrow-gap semiconductors. The theory is compared with the experimental results of [Formula: see text]. A theory is constructed of the temperature dependence of the magnetic susceptibility oscillations for narrow-gap electronic semiconductors. Using these oscillations of magnetic susceptibility, the cyclotron effective masses of electrons are determined. The calculation results are compared with experimental data. The proposed model explains the experimental results in [Formula: see text] at different temperatures.

First-Principle Study of the Structural, Electronic, and Optical Properties of Cubic InNxP1–x Ternary Alloys under Hydrostatic Pressure

2016 ◽  
Vol 71 (9) ◽  
pp. 783-796 ◽  
Author(s):  
I. Hattabi ◽  
A. Abdiche ◽  
R. Moussa ◽  
R. Riane ◽  
K. Hadji ◽  
...  
Keyword(s):  
Experimental Data ◽  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Bulk Modulus ◽  
Band Gap ◽  
Lattice Constant ◽  
First Principle ◽  
Electronic Band ◽  
Electronic And Optical Properties ◽  
Good Agreement

AbstractIn this article, we present results of the first-principle study of the structural, electronic, and optical properties of the InN, InP binary compounds and their related ternary alloy InNxP1–x in the zinc-blend (ZB) phase within a nonrelativistic full potential linearised augmented plan wave (FP-LAPW) method using Wien2k code based on the density functional theory (DFT). Different approximations of exchange–correlation energy were used for the calculation of the lattice constant, bulk modulus, and first-order pressure derivative of the bulk modulus. Whereas the lattice constant decreases with increasing nitride composition x. Our results present a good agreement with theoretical and experimental data. The electronic band structures calculated using Tran-Blaha-modified Becke–Johnson (TB-mBJ) approach present a direct band gap semiconductor character for InNxP1–x compounds at different x values. The electronic properties were also calculated under hydrostatic pressure for (P=0.00, 5.00, 10.0, 15.0, 20.0, 25.0 GPa) where it is found that the InP compound change from direct to indirect band gap at the pressure P≥7.80 GPa. Furthermore, the pressure effect on the dielectric function and the refractive index was carried out. Results obtained in our calculations present a good agreement with available theoretical reports and experimental data.

MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

2019 ◽  
pp. 104-115
Author(s):  
G. Gulyamov ◽  
U. I. Erkaboev ◽  
A. G. Gulyamov
Keyword(s):  
Mathematical Modeling ◽  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Landau Levels ◽  
Joint Density ◽  
Narrow Gap ◽  
Narrow Gap Semiconductors ◽  
Dispersion Law ◽  
The Magnetic Field

The article considers the oscillations of interband magneto-optical absorption in semiconductors with the Kane dispersion law. We have compared the changes in oscillations of the joint density of states with respect to the photon energy for different Landau levels in parabolic and non-parabolic zones. An analytical expression is obtained for the oscillation of the combined density of states in narrow-gap semiconductors. We have calculated the dependence of the maximum photon energy on the magnetic field at different temperatures. A theoretical study of the band structure showed that the magnetoabsorption oscillations decrease with an increase in temperature, and the photon energies nonlinearly depend on a strong magnetic field. The article proposes a simple method for calculating the oscillation of joint density of states in a quantizing magnetic field with the non-quadratic dispersion law. The temperature dependence of the oscillations joint density of states in semiconductors with non-parabolic dispersion law is obtained. Moreover, the article studies the temperature dependence of the band gap in a strong magnetic field with the non-quadratic dispersion law. The method is applied to the research of the magnetic absorption in narrow-gap semiconductors with nonparabolic dispersion law. It is shown that as the temperature increases, Landau levels are washed away due to thermal broadening and density of states turns into a density of states without a magnetic field. Using the mathematical model, the temperature dependence of the density distribution of energy states in strong magnetic fields is considered. It is shown that the continuous spectrum of the density of states, measured at the temperature of liquid nitrogen, at low temperatures turns into discrete Landau levels. Mathematical modeling of processes using experimental values of the continuous spectrum of the density of states makes it possible to calculate discrete Landau levels. We have created the three-dimensional fan chart of magneto optical oscillations of semiconductors with considering for the joint density of energy states. For a nonquadratic dispersion law, the maximum frequency of the absorbed light and the width of the forbidden band are shown to depend nonlinearly on the magnetic field. Modeling the temperature  dependence allowed us to determine the Landau levels in semiconductors in a wide temperature spectrum. Using the proposed model, the experimental results obtained for narrow-gap semiconductors are analyzed. The theoretical results are compared with experimental results.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Refined thermal calculation of the locomotive heat engine collector

2020 ◽  
pp. 56-58
Author(s):  
P.V. Gubarev ◽  
D.V. Glazunov ◽  
V.G. Ruban ◽  
A.S. Shapshal
Keyword(s):  
Experimental Data ◽  
Electric Motor ◽  
Heat Balance ◽  
Thermal Imaging ◽  
Heat Engine ◽  
Thermal Calculation ◽  
Calculation Results ◽  
Cooling Air ◽  
The Heat Balance ◽  
Traction Electric Motor

The thermal calculation of the locomotive traction engine collector is proposed. The equations of the heat balance of its elements are obtained taking into account the cooling air. The calculation results and experimental data of thermal imaging control are presented. Keywords: traction electric motor, collector, thermal calculation, thermal imaging control. [email protected]

scholarly journals Ability of Constitutive Models to Characterize the Temperature Dependence of Rubber Hyperelasticity and to Predict the Stress-Strain Behavior of Filled Rubber under Different Defor Mation States

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 369
Author(s):  
Xintao Fu ◽  
Zepeng Wang ◽  
Lianxiang Ma
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Mechanical Response ◽  
Constitutive Models ◽  
Uniaxial Tensile ◽  
Uniaxial Tensile Test ◽  
Chain Model ◽  
Stress Strain ◽  
Filled Rubber ◽  
Yeoh Model

In this paper, some representative hyperelastic constitutive models of rubber materials were reviewed from the perspectives of molecular chain network statistical mechanics and continuum mechanics. Based on the advantages of existing models, an improved constitutive model was developed, and the stress–strain relationship was derived. Uniaxial tensile tests were performed on two types of filled tire compounds at different temperatures. The physical phenomena related to rubber deformation were analyzed, and the temperature dependence of the mechanical behavior of filled rubber in a larger deformation range (150% strain) was revealed from multiple angles. Based on the experimental data, the ability of several models to describe the stress–strain mechanical response of carbon black filled compound was studied, and the application limitations of some constitutive models were revealed. Combined with the experimental data, the ability of Yeoh model, Ogden model (n = 3), and improved eight-chain model to characterize the temperature dependence was studied, and the laws of temperature dependence of their parameters were revealed. By fitting the uniaxial tensile test data and comparing it with the Yeoh model, the improved eight-chain model was proved to have a better ability to predict the hyperelastic behavior of rubber materials under different deformation states. Finally, the improved eight-chain model was successfully applied to finite element analysis (FEA) and compared with the experimental data. It was found that the improved eight-chain model can accurately describe the stress–strain characteristics of filled rubber.

The influence of hydrostatic pressure on the temperature dependence of the resistivity in

1997 ◽  
Vol 229 (2) ◽  
pp. 194-198 ◽  
Author(s):  
I.V. Medvedeva ◽  
Yu.S. Bersenev ◽  
K. Bärner ◽  
L. Haupt ◽  
R. Mandal ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Temperature Dependence
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