Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques

1997 ◽  
Vol 46 (1-3) ◽  
pp. 263-266 ◽  
Author(s):  
E.G. Stein von Kamienski ◽  
C. Leonhard ◽  
F. Portheine ◽  
A. Gölz ◽  
H. Kurz
Keyword(s):  
Silicon Carbide ◽  
Charge Injection ◽  
Gate Oxides ◽  
Term Stability ◽  
Long Term Stability ◽  
Type Silicon ◽  
Injection Techniques ◽  
P Type

scholarly journals Optimization of performance and long-term stability of p-type dye-sensitized solar cells with a cycloruthenated dye through electrolyte solvent tuning

2017 ◽  
Vol 1 (3) ◽  
pp. 626-635 ◽  
Author(s):  
Nathalie Marinakis ◽  
Markus Willgert ◽  
Edwin C. Constable ◽  
Catherine E. Housecroft
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Photoconversion Efficiency ◽  
Term Stability ◽  
Long Term Stability ◽  
Dye Sensitized ◽  
Ruthenium Dye ◽  
P Type ◽  
Sensitized Solar Cells

The balance between optimal photoconversion efficiency and long-term stability in p-type DSCs with a cyclometallated ruthenium dye is presented, with mixtures of acetonitrile and propionitrile being the best solvent with an I3−/I− redox couple.

scholarly journals Long-term stability of phase-separated half-Heusler compounds

2015 ◽  
Vol 17 (44) ◽  
pp. 29854-29858 ◽  
Author(s):  
J. Krez ◽  
B. Balke ◽  
S. Ouardi ◽  
S. Selle ◽  
T. Höche ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Heusler Compounds ◽  
Dendritic Microstructure ◽  
Low Thermal Conductivity ◽  
Term Stability ◽  
Long Term Stability ◽  
Heating And Cooling ◽  
P Type

The long-term stability of n- and p-type thermoelectric half-Heusler materials is investigated. The dendritic microstructure is temperature resistant and maintained the low thermal conductivity values (κ < 4 W m−1 K−1) even after 500 heating and cooling cycles.

Long-Term Stability of (Ti/Zr/Hf)CoSb1−xSnxThermoelectric p-Type Half-Heusler Compounds Upon Thermal Cycling

2015 ◽  
Vol 3 (12) ◽  
pp. 1217-1224 ◽  
Author(s):  
Elisabeth Rausch ◽  
Benjamin Balke ◽  
Siham Ouardi ◽  
Claudia Felser
Keyword(s):  
Thermal Cycling ◽  
Heusler Compounds ◽  
Term Stability ◽  
Long Term Stability ◽  
P Type

Titanium Tungsten (TiW) for Ohmic contacts to n-and p-type 4H-SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
M. Östling
Keyword(s):  
High Temperature ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Term Stability ◽  
Long Term Stability ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
P Type

ABSTRACTIn the present work, we investigated sputtered titanium tungsten (TiW) contacts for Ohmic contacts to both n- and p-type 4H-SiC with long-term stability under high temperature (500°C).. Epitaxial layers with a doping concentration of 1.3×1019 and 6×1018 cm−3 were used. After high temperature annealing (>950°C) sputtered TiW contacts showed Ohmic behavior with good uniform distribution of the specific contact resistance. We obtained an average specific contact resistance (pc) of 4×10−5 Ωcm2 and 1.2 ∼ 1.7×10−4 Ωcm2 for p- and n-type, respectively from linear TLM measurement. We also found some variation of the specific contact resistance and the sheet resistance from our TLM measurement for p-type contacts. We will discuss this behavior with the measurement of SIMS. Long-term stability with a top-cap layer is also discussed

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