Si (001) surface defects after extended high temperature annealing

In this paper, the evolution of the electrical behaviour of GaN and AlGaN materials after high-temperature annealing and thermal oxidation is discussed. In particular, annealing above 1100°C, required for electrical activation of implanted species, increases the surface state density, reducing the metal/GaN Schottky barriers and increasing the leakage current. On the other hand, the thermal oxidation at 900°C of AlGaN/GaN heterostructures showed the formation of a thin oxide layer, which can be able to passivate surface defects and/or can serve as inter-device isolation. However, a decrease of the sheet carrier density in the two dimensional electron gas (2DEG) was observed when the material is subjected to such high thermal budgets. The results are discussed considering the possible optimizations and applications to GaN-devices technology.

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FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION)

10.29003/m2482.mmmsec-2021/95-98 ◽

2021 ◽

Author(s):

Nataliya Shwartz ◽

Anna Spirina

Keyword(s):

Monte Carlo Simulation ◽

Gallium Arsenide ◽

Monte Carlo ◽

High Temperature ◽

Surface Relief ◽

Surface Defects ◽

High Temperature Annealing ◽

Morphological Transformations

In this work, simulation of high-temperature annealing of GaAs (111) substrates has been carried out. The dependences of the substrate morphological transformations on the temperature and the presence of surface defects are analyzed.

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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Simulation of the Process of Creation of Thin Silicide Films on Silicon under High-temperature Annealing

Journal of Automation and Information Sciences ◽

10.1615/jautomatinfscien.v33.i1.50 ◽

2001 ◽

Vol 33 (1) ◽

pp. 7

Author(s):

Ivan S. Levchenko ◽

Anatoliy A. Sukennyk ◽

Georgiy A. Chechko

Keyword(s):

High Temperature ◽

High Temperature Annealing

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FERROPERM

Alloy Digest ◽

10.31399/asm.ad.fe0099 ◽

1993 ◽

Vol 42 (4) ◽

Keyword(s):

Fracture Toughness ◽

High Temperature ◽

Physical Properties ◽

Saturation Magnetization ◽

Pure Iron ◽

Magnetic Alloy ◽

High Saturation Magnetization ◽

High Temperature Annealing ◽

Soft Magnetic ◽

Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

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