Diamond growth in a direct-current low-pressure supersonic plasmajet

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

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Collisional kinetics of non-uniform electric field, low-pressure, direct-current discharges in H2

Plasma Sources Science and Technology ◽

10.1088/0963-0252/20/4/043001 ◽

2011 ◽

Vol 20 (4) ◽

pp. 043001 ◽

Cited By ~ 25

Author(s):

A V Phelps

Keyword(s):

Electric Field ◽

Direct Current ◽

Low Pressure ◽

Uniform Electric Field ◽

Kinetics Of

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Measurements of electron densities and temperatures in low-pressure arcjet plasmas operating under diamond growth conditions

IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science ◽

10.1109/plasma.1996.550664 ◽

2002 ◽

Author(s):

K.R. Stalder ◽

E.A. Brinkman ◽

J.B. Jeffries

Keyword(s):

Low Pressure ◽

Growth Conditions ◽

Diamond Growth ◽

Electron Densities

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Direct current-self-sustained non-ambipolar plasma at low pressure

Applied Physics Letters ◽

10.1063/1.4856575 ◽

2013 ◽

Vol 103 (25) ◽

pp. 254104 ◽

Cited By ~ 2

Author(s):

Zhiying Chen ◽

Lee Chen ◽

Merritt Funk

Keyword(s):

Direct Current ◽

Low Pressure

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Computational analysis of direct current breakdown process in SF6 at low pressure

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ac1a9e ◽

2021 ◽

Author(s):

jiamao gao ◽

Hao Wu ◽

Shimin Yu ◽

Zhipeng Chen ◽

Zhijiang Wang ◽

...

Keyword(s):

Direct Current ◽

Computational Analysis ◽

Low Pressure ◽

Breakdown Process

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Diagnostic of low-pressure direct current helium microplasmas inside hollow capillary

International Photonics and Optoelectronics Meetings ◽

10.1364/ltst.2012.mth4a.10 ◽

2012 ◽

Author(s):

Quanzheng Xu ◽

Xinbing Wang ◽

Lian Duan ◽

Wei Chen

Keyword(s):

Direct Current ◽

Low Pressure

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Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Journal of Materials Research ◽

10.1557/jmr.1997.0426 ◽

1997 ◽

Vol 12 (12) ◽

pp. 3250-3253 ◽

Cited By ~ 19

Author(s):

Ji-Tao Wang ◽

Yong-Zhong Wan ◽

David Wei Zhang ◽

Zhi-Jie Liu ◽

Zhong-Qiang Huang

Keyword(s):

Experimental Data ◽

Phase Diagram ◽

Phase Diagrams ◽

Linear Combination ◽

Three Dimensional ◽

Low Pressure ◽

Diamond Growth ◽

Growth Region ◽

Calculated Phase ◽

O Phase

Three-dimensional temperature (T)–pressure (P)–composition (X) phase diagrams of binary carbon-hydrogen (C–H) and carbon-oxygen (C–O) systems for activated low pressure diamond growth have been calculated. Based on an approximation of linear combination between C–H and C–O systems, a projective ternary carbonhydrogen-oxygen (C–H–O) phase diagram has also been obtained. There is always a diamond growth region in each of these phase diagrams. Once a supply of external activating energy stops, the diamond growth region will not exist. Nearly all of the reliable experimental data reported in the literature drop into the possible diamond growth region of the calculated projective ternary C–H–O phase diagram under the conditions of 0.01–100 kPa and above 700 K.

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A simplified analytical model of diamond growth in direct current arcjet reactors

Journal of Materials Research ◽

10.1557/jmr.1995.1993 ◽

1995 ◽

Vol 10 (8) ◽

pp. 1993-2010 ◽

Cited By ~ 28

Author(s):

David S. Dandy ◽

Michael E. Coltrin

Keyword(s):

Direct Current ◽

Defect Density ◽

Chemical Vapor ◽

Quantitative Agreement ◽

Chemical Kinetic ◽

Operating Conditions ◽

Diamond Growth ◽

Simplified Model ◽

Flow Models ◽

Wide Range

A simplified model of a direct current arcjet-assisted diamond chemical vapor deposition reactor is presented. The model is based upon detailed theoretical analysis of the transport and chemical processes occurring during diamond deposition, and is formulated to yield closed-form solutions for diamond growth rate, defect density, and heat flux to the substrate. In a direct current arcjet reactor there is a natural division of the physical system into four characteristic domains: plasma torch, free stream, boundary layer, and surface, leading to the development of simplified thermodynamic, transport, and chemical kinetic models for each of the four regions. The models for these four regions are linked to form a single unified model. For a relatively wide range of reactor operating conditions, this simplified model yields results that are in good quantitative agreement with stagnation flow models containing detailed multicomponent transport and chemical kinetics. However, in contrast to the detailed reactor models, the model presented here executes in near real-time on a computer of modest size, and can therefore be readily incorporated into process control models or global dynamic loop simulations.

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