Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

1998 ◽  
Vol 50 (1-4) ◽  
pp. 13-18 ◽  
Author(s):  
Tooru Tanaka ◽  
Nobutaka Tanahashi ◽  
Toshiyuki Yamaguchi ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Rf Sputtering

Structural characterization of V2O5–TiO2 thin films deposited by RF sputtering from a titanium target with vanadium insets

2005 ◽  
Vol 109 (1) ◽  
pp. 47-51 ◽  
Author(s):  
I. Alessandri ◽  
E. Comini ◽  
E. Bontempi ◽  
G. Sberveglieri ◽  
L.E. Depero
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Rf Sputtering ◽  
Tio2 Thin Films ◽  
Titanium Target

Characterization of MgO thin films grown by rf-sputtering

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 577-581 ◽  
Author(s):  
D Cáceres ◽  
I Colera ◽  
I Vergara ◽  
R González ◽  
E Román
Keyword(s):  
Thin Films ◽  
Rf Sputtering

Preparation and Characterization of BaTiO3 Thin Films on MgO-buffered Si(100) Substrates by RF Sputtering

1997 ◽  
Vol 12 (4) ◽  
pp. 1152-1159 ◽  
Author(s):  
Sangsub Kim ◽  
Shunichi Hishita
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Large Scale ◽  
Rf Sputtering ◽  
Morphological Characteristics ◽  
Electrical Measurements ◽  
Metal Type ◽  
Metal Insulator Metal

We report the results of a study on the deposition and characterization of partially oriented BaTiO3 thin films on MgO-buffered Si(100) by radio-frequency magnetron sputtering. The structural and morphological characteristics of the MgO buffer layer were investigated as a function of substrate temperature. The x-ray θ-2θ, φ scans, and observation of surface morphology revealed that MgO grew with a tendency of (001) orientation. Partially (00l) or (h00) textured BaTiO3 thin films were obtained on Si(100) with the MgO buffer layer while randomly oriented BaTiO3 thin films with large-scale cracks on the surface were made without the MgO layer. Pt/BaTiO3/Pt multistructures were formed on Si(100), MgO/Si(100), and MgO(100) single crystal substrates to conduct preliminary electrical measurements for metal-insulator-metal type capacitor. Comparison of the crystallographic orientation, morphology, and electrical properties between the BaTiO3 films on Si(100) with and without the MgO buffer layer supported the favorable role of the MgO layer as a buffer for the growth of BaTiO3 films on Si(100).

Characterization of Ag oxide thin films prepared by reactive RF sputtering

Vacuum ◽  
2004 ◽  
Vol 76 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Yoshio Abe ◽  
Tomoaki Hasegawa ◽  
Midori Kawamura ◽  
Katsutaka Sasaki
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Oxide Thin Films

Compositional characterization of silicon nitride thin films prepared by RF-sputtering

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 513-518 ◽  
Author(s):  
M Vila ◽  
J.A Martı́n-Gago ◽  
A Muñoz-Martı́n ◽  
C Prieto ◽  
P Miranzo ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Rf Sputtering ◽  
Compositional Characterization

Photoluminescence Characterization of ZnO Thin Films Grown by RF- Sputtering

2011 ◽  
Author(s):  
S. K. Mohd Bakhori ◽  
S. S. Ng ◽  
M. A. Ahmad ◽  
H. Ahmad ◽  
Z. Hassan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Zno Thin Films
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