Preparation and Characterization of BaTiO3 Thin Films on MgO-buffered Si(100) Substrates by RF Sputtering

1997 ◽  
Vol 12 (4) ◽  
pp. 1152-1159 ◽  
Author(s):  
Sangsub Kim ◽  
Shunichi Hishita
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Large Scale ◽  
Rf Sputtering ◽  
Morphological Characteristics ◽  
Electrical Measurements ◽  
Metal Type ◽  
Metal Insulator Metal

We report the results of a study on the deposition and characterization of partially oriented BaTiO3 thin films on MgO-buffered Si(100) by radio-frequency magnetron sputtering. The structural and morphological characteristics of the MgO buffer layer were investigated as a function of substrate temperature. The x-ray θ-2θ, φ scans, and observation of surface morphology revealed that MgO grew with a tendency of (001) orientation. Partially (00l) or (h00) textured BaTiO3 thin films were obtained on Si(100) with the MgO buffer layer while randomly oriented BaTiO3 thin films with large-scale cracks on the surface were made without the MgO layer. Pt/BaTiO3/Pt multistructures were formed on Si(100), MgO/Si(100), and MgO(100) single crystal substrates to conduct preliminary electrical measurements for metal-insulator-metal type capacitor. Comparison of the crystallographic orientation, morphology, and electrical properties between the BaTiO3 films on Si(100) with and without the MgO buffer layer supported the favorable role of the MgO layer as a buffer for the growth of BaTiO3 films on Si(100).

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

1998 ◽  
Vol 50 (1-4) ◽  
pp. 13-18 ◽  
Author(s):  
Tooru Tanaka ◽  
Nobutaka Tanahashi ◽  
Toshiyuki Yamaguchi ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Rf Sputtering

Structural characterization of V2O5–TiO2 thin films deposited by RF sputtering from a titanium target with vanadium insets

2005 ◽  
Vol 109 (1) ◽  
pp. 47-51 ◽  
Author(s):  
I. Alessandri ◽  
E. Comini ◽  
E. Bontempi ◽  
G. Sberveglieri ◽  
L.E. Depero
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Rf Sputtering ◽  
Tio2 Thin Films ◽  
Titanium Target

Characterization of MgO thin films grown by rf-sputtering

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 577-581 ◽  
Author(s):  
D Cáceres ◽  
I Colera ◽  
I Vergara ◽  
R González ◽  
E Román
Keyword(s):  
Thin Films ◽  
Rf Sputtering

Al Doped Ta2O5 Thin Films for Microelectronic Applications

2000 ◽  
Vol 654 ◽  
Author(s):  
P. C Joshi ◽  
M. W. Cole ◽  
C. W. Hubbard ◽  
E. Ngo
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Atomic Force ◽  
The Stability ◽  
Insulating Properties ◽  
Post Deposition

AbstractIn this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

Preparation and Characterization of (Ba1-xSrx)TiO3 Thin Films for Infrared Detection by Pulsed Iaserdeposion Method

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kubo ◽  
H. Xu ◽  
Y. Yoshino ◽  
M. Okuyama
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Infrared Detection ◽  
Sharp Change ◽  
Dielectric Peak ◽  
Peak Point ◽  
Active Oxygen Radicals ◽  
Pyroelectric Material

AbstractBa1-xSrxTiO3 thin films have been deposited on Pt/Ti/SiO2/Si substra by the pulsed ArF laser deposition method. Deposition conditions, such as ambient gas and substrt temperatze, have been optmized to rrxove crystallinepropesty. Fe oelectric p e phasehasbeenobtainod ithe BSTthin filns deposited above 500°C in Q2 gas havingpressure ofabout 13Pa. Using N2O gas instead of O2 gas improved the crystallinity, because highly chemical active oxygen radicals produced due to ultraviolet inadiation of the laser. Doping of Bi ranging around 2% fills of the role of decrease leakage current of BST thin films. Temperature dependence of the dielectric constant (εr) shows a sharp change, peaking aroumd room temperature. The peak point exists below 25°C in the ratio of Ba/Sr=1.1 film, and shills above 50°C in Ba/Sr=5.7 film. When the Ba/Sr ratio is 1.4 the dielectric peak exists near 27°C and is very sharp. The maxinium differentW rate of dielectric constanttversus temperature is the largest in Ba/Sr=1.4 film and is about 100K-1. This value is equivalent to apyroelectric coefficient of 1.8 × 10-7 C/cm2K, which is almost the same as that of LiTaO3 single crystl, a typical pyroelectric material.

Formation and characterization of the CuIn(S,Se)2/buffer layer interface in electrodeposited solar cells

2005 ◽  
Vol 865 ◽  
Author(s):  
N. Naghavi ◽  
C. Hubert ◽  
O. Roussel ◽  
L. Sapin ◽  
M. Lamirand ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Fill Factor ◽  
Open Circuit ◽  
Solution Chemistry ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Main Role ◽  
Near Surface

AbstractThis paper presents the influence of the solution chemistry of chemical bath deposition (pH and complexing agents) on the performance of CuIn(S,Se)2 cells after an initial CN treatment. It is shown that it is possible to modify the deposition conditions of the CdS by increasing the pH of the solution and by replacing the complexing agent (ammonia) by citrate ions. Both NH3 based and citrate based process give very homogenous and covering thin films. However, in the case of the citrate based process a decrease of open circuit voltage (Voc) and fill factor (FF) and thus of the cell efficiencies is observed. This points out that the main role of the buffer layer is not only related to the specific properties of the CdS itself but also to the near surface modifications of the CuIn(S,Se)2 caused by the presence of the complexing agent in the bath.

Characterization of Ag oxide thin films prepared by reactive RF sputtering

Vacuum ◽  
2004 ◽  
Vol 76 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Yoshio Abe ◽  
Tomoaki Hasegawa ◽  
Midori Kawamura ◽  
Katsutaka Sasaki
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Oxide Thin Films
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