Effect of substrate temperature on microstructural and optical properties of ZnO films grown by pulsed laser deposition

Rare Metals ◽  
2006 ◽  
Vol 25 (2) ◽  
pp. 161-165 ◽  
Author(s):  
J HE ◽  
H ZHUANG ◽  
C XUE ◽  
S WANG ◽  
L HU ◽  
...  
2020 ◽  
Vol 7 (1) ◽  
pp. 016414
Author(s):  
Reeson Kek ◽  
Kwan-Chu Tan ◽  
Chen Hon Nee ◽  
Seong Ling Yap ◽  
Song Foo Koh ◽  
...  

2012 ◽  
Vol 717-720 ◽  
pp. 1327-1330
Author(s):  
Ji Chul Jung ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  

We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increases from ~760 Ω/square to ~4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination has also been studied.


2010 ◽  
Vol 256 (18) ◽  
pp. 5650-5655 ◽  
Author(s):  
S. Lemlikchi ◽  
S. Abdelli-Messaci ◽  
S. Lafane ◽  
T. Kerdja ◽  
A. Guittoum ◽  
...  

Vacuum ◽  
2008 ◽  
Vol 82 (5) ◽  
pp. 495-500 ◽  
Author(s):  
B.L. Zhu ◽  
X.H. Sun ◽  
X.Z. Zhao ◽  
F.H. Su ◽  
G.H. Li ◽  
...  

2009 ◽  
Vol 105 (11) ◽  
pp. 113516 ◽  
Author(s):  
X. H. Pan ◽  
W. Guo ◽  
Z. Z. Ye ◽  
B. Liu ◽  
Y. Che ◽  
...  

2001 ◽  
Vol 696 ◽  
Author(s):  
M.C. Park ◽  
W.H. Yoon ◽  
D.H. Lee ◽  
J.M. Myoung ◽  
S.H. Bae ◽  
...  

AbstractA series of ZnO films with various thicknesses were prepared on (0001) sapphire substrate by pulsed laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis were utilized to investigate the effects of misfit strain on the surface morphology and the crystallinity. The electrical and optical properties of the films were also investigated as a function of the film thickness. It was found that the crystalline quality, electrical and optical properties of the films depended on the film thickness and were improved with increasing the film thickness. This is attributed to the fact that the films thinner than 400 nm are under the severe misfit strain, which decreases as the film thickness increases further.


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