Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1−xAs quantum wells with chemical adsorbates

1996 ◽  
Vol 101 (2-3) ◽  
pp. 113-117 ◽  
Author(s):  
Yao Liu ◽  
Xu-Rui Xiao ◽  
Xue-Ping Li ◽  
Zhong-Ying Xu ◽  
Zhi-Liang Yuan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Surface ◽  
Photoluminescence Studies

scholarly journals Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Joon Sue Lee ◽  
Borzoyeh Shojaei ◽  
Mihir Pendharkar ◽  
Mayer Feldman ◽  
Kunal Mukherjee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Mobility ◽  
Near Surface ◽  
Barrier Materials

Photoluminescence studies of GaAs-GaAlAs multiple quantum wells

1985 ◽  
Vol 2 (12) ◽  
pp. 529-532
Author(s):  
Xu Zhong-ying ◽  
Xu Ji-zong ◽  
Chen Zong-gui ◽  
Zhuang Wei-hua ◽  
Xu Jun-ying ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Studies

45° REFLECTOMETRY OF SEMICONDUCTOR QUANTUM WELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 683-687
Author(s):  
A. SILVA-CASTILLO ◽  
F. PEREZ-RODRIGUEZ
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Growth Direction ◽  
Angle Of Incidence ◽  
Near Surface ◽  
New Information ◽  
Difference Formula ◽  
Exciton Polaritons ◽  
The Difference ◽  
First Time

We have applied the 45° reflectometry for the first time to study exciton-polaritons in quantum wells. The 45° reflectometry is a new polarization-modulation technique, which is based on the measurement of the difference [Formula: see text] between the p-polarization reflectivity (Rp) and the squared s-polarization reflectivity [Formula: see text] at an angle of incidence of 45°. We show that [Formula: see text] spectra may provide qualitatively new information on the exciton-polariton modes in a quantum well. These optical spectra turn out to be very sensitive to the zeros of the dielectric function along the quantum-well growth direction and, therefore, allow to identify the resonances associated with the Z exciton-polariton mode. We demonstrate that 45° reflectometry could be a powerful tool for studying Z exciton-polariton modes in near-surface quantum wells, which are difficult to observe in simple spectra of reflectivity Rp

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Simulation of Structural Transformations in Modified Near-Surface Layers of Crystals

2019 ◽  
Vol 970 ◽  
pp. 276-282
Author(s):  
Yury Borodin ◽  
Anastasia Mantina
Keyword(s):  
Quantum Wells ◽  
Riemannian Space ◽  
Structural Transformations ◽  
Thin Layers ◽  
Surface Layers ◽  
Near Surface ◽  
Internal Geometry ◽  
Structure Ordering

Superlattice formation in thin layers of oxidizing crystals and the effect of near-surface proton saturation on structure ordering, formation and periodical distribution of quantum wells have been discussed. The paper shows, it is necessary to develop non-Euclidean approach to the crystal’s internal geometry and consider, in consecutive order, the question of the four-dimentional Riemannian space into three-dimentional Eucliden space interpretation (RE interpretation).

Low Temperature Photoluminescence Studies of Narrow Bandgap Gaassbn Quantum Wells on GaAs

2002 ◽  
Vol 744 ◽  
Author(s):  
K.E. Waldrip ◽  
E.D. Jones ◽  
N.A. Modine ◽  
F. Jalali ◽  
J.F. Klem ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Band Gap ◽  
First Principles ◽  
Structure Calculation ◽  
Ex Situ ◽  
Band Structure Calculation ◽  
Narrow Bandgap ◽  
Order Of Magnitude ◽  
Photoluminescence Studies

We present low-temperature (T = 4K) photoluminescence studies of the effect of adding nitrogen to 6-nm-wide single-strained GaAsSb quantum wells on GaAs. The samples were grown by both MBE and MOCVD tech-niques. The nominal Sb concentration is about 30%. Adding about 1 to 2% N drastically reduced the bandgap energies from 1 to 0.75 eV, or 1.20 to 1.64 μm. Upon performing ex situ rapid thermal anneals, 825°C for 10s, the band gap energies as well as the photoluminescence intensities increased. The intensities increased by an order of magnitude for the annealed samples and the band gap energies increased by about 50 - 100 meV, depending on growth temperatures. The photoluminescence linewidths tended to decrease upon annealing. Preliminary results of a first-principles band structure calculation for the GaAsSbN system are also presented.

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