45° REFLECTOMETRY OF SEMICONDUCTOR QUANTUM WELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 683-687
Author(s):  
A. SILVA-CASTILLO ◽  
F. PEREZ-RODRIGUEZ

We have applied the 45° reflectometry for the first time to study exciton-polaritons in quantum wells. The 45° reflectometry is a new polarization-modulation technique, which is based on the measurement of the difference [Formula: see text] between the p-polarization reflectivity (Rp) and the squared s-polarization reflectivity [Formula: see text] at an angle of incidence of 45°. We show that [Formula: see text] spectra may provide qualitatively new information on the exciton-polariton modes in a quantum well. These optical spectra turn out to be very sensitive to the zeros of the dielectric function along the quantum-well growth direction and, therefore, allow to identify the resonances associated with the Z exciton-polariton mode. We demonstrate that 45° reflectometry could be a powerful tool for studying Z exciton-polariton modes in near-surface quantum wells, which are difficult to observe in simple spectra of reflectivity Rp

1892 ◽  
Vol s2-33 (130) ◽  
pp. 313-324
Author(s):  
ASAJIRO OKA ◽  
ARTHUR WILLEY

Sarcodidemnoides misakiense, Oka and Willey. Generic Characters.--Colony (or cormus) forming very thick lobose masses, laterally compressed; sessile, but not encrusting. Excurrent orifices placed on the tips of the knoll-like prominences. Ascidiozooids very numerous, not arranged in systems; branchial sac with four rows of stigmata; canal system complicated, differentiated into peripheral and central portions. Specific Characters.--Atrial apertures of Ascidiozooids simple pores without teeth or languet; spicules fairly abundant, extremely delicate, confined to a thin layer near surface of test. Test gelatinous, containing numerous bladder-cells, crystals, fusiform cells, and pigment concretions. Stomach of Ascidiozooids vertically placed; surface of attachment of colony narrower than the free portion. Colour, brilliant red. Habitat.--Moroiso, Japan, between the tide-marks. N.B.--Since the above was written I have seen for the first time the exhaustive work of Fernand Lahille, entitled ‘Recherches sur les Tuniciers des côtes de France,' Toulouse, 1890. Lahille devotes considerable attention to what have been spoken of above as tentacle-like processes of the larva, figures them in many larvæ, and gives an excellent figure of the metamorphosing larva of Styela glomerata. He gives an opinion as to their significance which I cannot entirely endorse in the light of my own researches on the "Postembryonic development of Styela," commenced last August at Plymouth. However, I hope to return to this question on a future occasion. Lahille raises an objection to von Drasche's genus Didemnoides on the ground that the thickness of the cormus is not an anatomical character, and that the distinction between thick and thin colonies is a purely subjective one. There is no doubt some truth in this; but the difference between a compound Ascidian which possesses, say, a very few spicules, and one which possesses none at all, would appear to be no more fundamental than that between a colony whose mode of growth resulted in the production of a fleshy mass and one which grew in the form of a thin leathery crust. As stated above, von Drasche intends by Didemnoides a fleshy form of Leptoclinum, the test containing spicules, and the Ascidiozooids having four rows of stigmata in the branchial sac. Lahille, on the contrary,applies the name Didemnoides to those Didemnidse which are characterised by the absence of spicules, and the possession of three rows of stigmata in the branchial sac. The compound Ascidian which we have described above has spicules in the test, and four rows of stigmata in the branchial sac. But as it would be too absurd to call the new form "Sarcoleptoclinum," we shall persist in regarding the genus Didemnoides from the point of view of von Drasche.--A. W.


2003 ◽  
Vol 798 ◽  
Author(s):  
T. Böttcher ◽  
F. Bertram ◽  
P. Bergman ◽  
A. Ueta ◽  
J. Christen ◽  
...  

ABSTRACTIn order to optimize the quantum efficiency of InGaN quantum wells, different MOVPE growth sequences are compared using photo- and electroluminescence. In one study, the surface was pretreated with trimethylindium (TMIn) prior to the well deposition. In another study, growth interruptions were performed after the quantum well deposition to desorb segregated indium. In both cases, the room-temperature photoluminescence (PL) intensity is strongly enhanced. For the samples grown with TMIn preflow the wavelength distribution in low-temperature cathodoluminescence (CL) wavelength mappings is narrowed, which can be attributed to more homogeneous quantum wells. Furthermore, the decay times of the radiative recombination increase both at RT and 2K. A reason for this could be an improved indium profile along the growth direction or a more homogeneous In wetting layer due to the pre-wetted surface.


2006 ◽  
Vol 13 (04) ◽  
pp. 397-401 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN

The binding energy of the donor in three different shaped triple graded GaAs -( Ga , Al ) As quantum wells which is obtained by changing the depth of the central-well potential (Vo) is calculated by using a variational approach. The results have been obtained in the presence of uniform magnetic and electric fields applied along the growth direction as a function of the impurity position. In addition, we also give the binding energy of the hydrogenic donor impurity for triple square quantum wells having the same physical parameters with triple graded quantum well structures in order to see the effect of different geometric confinements on the donor impurity binding energy.


1988 ◽  
Vol 37 (18) ◽  
pp. 10927-10930 ◽  
Author(s):  
M. Kohl ◽  
D. Heitmann ◽  
P. Grambow ◽  
K. Ploog

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Köteles ◽  
A. N. M. Masum Choudhury ◽  
A. Levy ◽  
B. Elman ◽  
P. Melman ◽  
...  

ABSTRACTQuantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies. This was accomplished, in a spatially selective manner, by using low energy ion implantation through a mask to generate vacancies. Subsequent rapid thermal annealing drove these vacancies down to the quantum wells where their presence enhanced the thermally driven interdiffusion of atoms between the well and barrier layers. The goal of this work is to develop a simple process for the integration of optoelectronic devices with differing functions.


1989 ◽  
Vol 160 ◽  
Author(s):  
Emil S. Koteles ◽  
B. Elman ◽  
P. Melman ◽  
C.A. Armiento

AbstractWe have demonstrated that shallow ion (75As+) implantation and rapid thermal annealing (RTA) of strained InGaAs/GaAs quantum well (QW) structures can modify the optical properties of these epitaxial semiconductor heterostructures in a spatially selective manner. After RTA, exciton QW energies, determined from peaks in the photoluminescence spectra, shifted significantly to higher values only in the implanted regions. The magnitudes of the shifts were dependent on QW widths, RTA temperatures, and implantation fluences. The shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded (gradual interfaces) due to enhanced indium diffusion out of the well layers in irradiated areas as a consequence of the diffusion of vacancies generated near the surface by the implantation. The thermal processing had only a small effect on the strain present in the quantum well layers due to the difference in the lattice constant of the well and barrier layers.


1989 ◽  
Vol 160 ◽  
Author(s):  
Weimin Zhou ◽  
Clive H. Perry ◽  
John M. Worlock

AbstractHigh pressure photoluminescence measurements on modulation doped GaAs-AlGaAs quantum well structures have been performed for the first time with applied magnetic fields up to 15 Tesla. We have observed Landau fans from interband transitions of the 2D free electron gas between 0 and 8.5 kbar. In this pressure range the electron effective mass in GaAs increased at the rate of 2.6% per kbar. Above 9 kbar, the free Landau transitions disappeared and bound magneto-exiton behaviour dominated the spectrum. The influence of pressure on the band-gaps causes a controlled trapping of the free electron from the GaAs well to Si donors (DX centers) in the AlGaAs layers. Above 9 kbar the pressure coefficient of the GaAs band gap was found to be 10.4 meV/kbar which is comparable to the accepted value in undoped GaAs quantum well structures.


2013 ◽  
Vol 47 (9) ◽  
pp. 1203-1208 ◽  
Author(s):  
R. A. Khabibullin ◽  
G. B. Galiev ◽  
E. A. Klimov ◽  
D. S. Ponomarev ◽  
I. S. Vasil’evskii ◽  
...  

1994 ◽  
Vol 354 ◽  
Author(s):  
H.K. Dong ◽  
N.Y. Li ◽  
C.W. Tu

AbstractWe report for the first time laser-modified chemical beam epitaxy (CBE) of InGaAs/GaAs multiple quantum well (MQW) structures using trimethylindium (TMIn), triethylgallium (TEGa), and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. X-ray rocking curve (XRC) and low-temperature photoluminescence (PL) measurements were used to characterize the pseudomorphic strained quantum well structures. As determined by the X-ray simulation, laser irradiation during the InGaAs well growth was found to enhance the InGaAs growth rate and reduce the indium concentration in the substrate temperature range studied, 440-S00°C, where good interfaces can be achieved. We attribute these changes to laser-enhanced decomposition of TEGa and laser-enhanced desorption of TDMAAs. With laser irradiation, lateral variation of PL exciton peaks was observed, and the PL peaks became narrower.


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